MIL-M-38510-111 Microcircuits, Analog Switch With Driver, Monolithic And Multi-Chip SiliconThis specification covers the detail requirements for silicon, break-before-make, monolithic and multi-chip analog switches with drivers. Two product assurance classes and a choice of case outlines and lead finishes are provided and are reflected in the complete part number. For this product, the requirements of MIL-M-38510 have been superseded by MIL-PRF-38535, see 6.3

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MIL-M-38510/111A

NOTES:

1. R1 = R2 = 1 kν ± 5%. CL1 = CL2 = (95-200) pF ± 5%, to include test and fixture capacitance.

2. Both TD1 and TD2 shall be measured. These measurements shall apply only to device types 05, 06, 07, and 08.

See 3.5.1 for switch conditions.

3. Vsource = -7.5 V (for Ton and Toff - Device types 05 and 07).

Vsource = -10.0 V (for Ton and Toff - Device types 06 and 08).

4. VO = -7.2 V (device types 05 and 07).

VO = -9.2 V (device types 06 and 08).

5. The driver pulse generator shall have the following characteristics:

a. Vgen = 0 V to 3.0 V.

b. Rise time (0.3 V to 2.7 V) ≤ 10 ns.

c. Fall time (2.7 V to 0.3 V) ≤ 10 ns.

6. Break-before-make performance: The device types 05, 06, 07 and 08 all operate in the break-before-make mode at room temperature (25° ± 3°C) and higher (to 125° ± 3°C). Break-before-make performance is defined as a difference between Ton and Toff of 5 ns when two switches driven by a common driver are switching a common analog signal. Ton and Toff are measured as shown in figure 6. Below room temperture, it is possible that under negative analog voltage conditions, break-before-make action may not occur.

FIGURE 6. Break-before-make test - Continued.