MIL-M-38510-141 Microcircuits, Linear, Darlington Transistor Array, Seven And Eight Gate, Monolithic SiliconThis specification covers the detail requirements for monolithic silicon, seven and eight gate, Darlington transistor array microcircuits. Two product assurance classes and a choice of case outlines and lead finishes are provided and are reflected in the complete part number. For this product, the requirements of MIL-M-38510 have been superseded by MIL-PRF-38535, see 6.3

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MIL-M-38510/141B

TABLE I. Electrical performance characteristics - Continued.

Test	Symbol	Conditions -55°C ≤ TA ≤ +125°C unless otherwise specified	Device type	Limits		Units
Test	Symbol	Conditions -55°C ≤ TA ≤ +125°C unless otherwise specified	Device type	Min	Max	Units
DC forward current transfer ratio	hFE	VCE = 2 V, IC = 350 mA, TA = -55°C	03, 08	500
DC forward current transfer ratio	hFE	VCE = 2 V, IC = 350 mA, +25°C ≤ TA ≤ +125°C	03, 08	1000
Clamp diode leakage current	IR	VR = 50 V	03, 08		10.0	µA
Clamp diode forward voltage	VF	IF = 350 mA	03, 08		2.0	V
Turn on delay	tPLH	TA = +25°C, see figure 4	03, 08		750	ns
Turn off delay	tPHL	TA = +25°C, see figure 4	03, 08		300	ns