MIL-M-38510-141 Microcircuits, Linear, Darlington Transistor Array, Seven And Eight Gate, Monolithic SiliconThis specification covers the detail requirements for monolithic silicon, seven and eight gate, Darlington transistor array microcircuits. Two product assurance classes and a choice of case outlines and lead finishes are provided and are reflected in the complete part number. For this product, the requirements of MIL-M-38510 have been superseded by MIL-PRF-38535, see 6.3

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Test

Symbol

Conditions

-55°C � TA � +125°C

unless otherwise specified

Device type

Limits

Units

Min

Max

Output leakage current

ICEX

VCE = 50 V

01, 06

10.0

µA

Collector emitter saturation voltage

VCE(sat)

IC = 350 mA, IB = 850 µA, TA = -55°C

01, 06

1.8

V

IC = 200 mA, IB = 550 µA, TA = -55°C

1.5

IC = 100 mA, IB = 350 µA, TA = -55°C

1.3

IC = 350 mA, IB = 500 µA, TA = +25°C

1.6

IC = 200 mA, IB = 350 µA, TA = +25°C

1.3

IC = 100 mA, IB = 250 µA, TA = +25°C

1.1

IC = 350 mA, IB = 500 µA, TA = +125°C

1.8

IC = 200 mA, IB = 350 µA, TA = +125°C

1.5

IC = 100 mA, IB = 250 µA, TA = +125°C

1.3

Input current

IIN(off)

IB � 25 µA

01, 06

500

µA

DC forward current transfer ratio

hFE

VCE = 2 V, IC = 350 mA, TA = -55°C

01, 06

500

VCE = 2 V, IC = 350 mA,

+25°C � TA � +125°C

1000

Clamp diode leakage current

IR

VR = 50 V

01, 06

10.0

µA

Clamp diode forward voltage

VF

IF = 350 mA

01, 06

2.0

V

Turn on delay

tPLH

TA = +25°C, see figure 4

01, 06

750

ns

Turn off delay

tPHL

TA = +25°C, see figure 4

01, 06

300

ns