MIL-M-38510-141 Microcircuits, Linear, Darlington Transistor Array, Seven And Eight Gate, Monolithic SiliconThis specification covers the detail requirements for monolithic silicon, seven and eight gate, Darlington transistor array microcircuits. Two product assurance classes and a choice of case outlines and lead finishes are provided and are reflected in the complete part number. For this product, the requirements of MIL-M-38510 have been superseded by MIL-PRF-38535, see 6.3

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Test

Symbol

Conditions

-55°C � TA � +125°C

unless otherwise specified

Device type

Limits

Units

Min

Max

Output leakage current

ICEX

VCE = 50 V

03, 08

10.0

µA

Collector emitter saturation voltage

VCE(sat)

IC = 350 mA, IB = 850 µA, TA = -55°C

03, 08

1.8

V

IC = 200 mA, IB = 550 µA, TA = -55°C

1.5

IC = 100 mA, IB = 350 µA, TA = -55°C

1.3

IC = 350 mA, IB = 500 µA, TA = +25°C

1.6

IC = 200 mA, IB = 350 µA, TA = +25°C

1.3

IC = 100 mA, IB = 250 µA, TA = +25°C

1.1

IC = 350 mA, IB = 500 µA, TA = +125°C

1.8

IC = 200 mA, IB = 350 µA, TA = +125°C

1.5

IC = 100 mA, IB = 250 µA, TA = +125°C

1.3

Input current

IIN(on)

VIN = 3.85 V

03, 07

650

1350

µA

Input current

IIN(off)

IB � 25 µA

03, 08

500

µA

Input voltage

VIN(on)

VCE � 2 V, IC = 200 mA, TA = -55°C

03, 08

2.6

V

VCE � 2 V, IC = 250 mA, TA = -55°C

2.8

VCE � 2 V, IC = 300 mA, TA = -55°C

3.0

VCE � 2 V, IC = 200 mA,

+25°C � TA � +125°C

2.0

VCE � 2 V, IC = 250 mA,

+25°C � TA � +125°C

2.2

VCE � 2 V, IC = 300 mA,

+25°C � TA � +125°C

2.4