MIL-M-38510-657 Microcircuits, Digital, High-Speed Cmos, Buffer Gates, Monolithic SiliconThis specification covers the detail requirements for monolithic silicon, high speed CMOS, logic microcircuits. Two product assurance classes and a choice of case outlines and lead finishes are provided and are reflected in the complete Part or Identifying Number PIN. For this product, the requirements of MIL-M-38510 have been superseded by MIL-PRF-38535 see 6.3.

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MIL-M-38510/657A

6.5  Abbreviations, symbols, and definitions.  The abbreviations, symbols, and definitions used herein are defined in

MIL-PRF-38535, MIL-HDBK-1331, and as follows:

Ci .................................................  Input terminal-to-GND capacitance. ICC  ...............................................  Quiescent supply current.

VCC  ..............................................  Positive supply voltage.

VIN  ...............................................  Voltage level at an input terminal.

IIN  ................................................  Current flowing into an input terminal.

tPHZ  ..............................................  Output disable time from high level.  The time between the specified reference

points on the input and output voltage waveforms with the three-state output

changing from the defined high level to a high-impedance (off) state.

tPLZ  ..............................................  Output disable time from low level.  The time between the specified reference points on the input and output voltage waveforms with the three-state output changing from the defined low level to a high  impedance (off) state.

tPZH  ..............................................  Output enable time to high level.  The time between the specified reference points on the input and output voltage waveforms with the three-state output changing from high impedance (off) state to the defined high level.

tPZL  ..............................................  Output enable time to low level.  The time between the specified reference points on the input and output voltage waveforms with the three-state output changing from high impedance (off) state to the defined low level.

IOZL  ..............................................  Output current in the high-impedance mode with output voltage low. IOZH ..............................................  Output current in the high-impedance mode with output voltage high. CPD...............................................  Power dissipation capacitance.

ICC� .............................................  Additional supply current when using worst case TTL input levels. TC  ................................................  Case temperature.

GND ............................................  Ground zero voltage potential.

TA  ................................................  Free air temperature.

6.6  Logistic support.  Lead materials and finishes (see 3.4) are interchangeable.  Unless otherwise specified, microcircuits acquired for Government logistic support will be acquired to device class S for National Aeronautics and Space Administration or class B for Department of Defense (see 1.2.2), lead material and finish A (see 3.4).  Longer length leads and lead forming should not affect the part number.

6.7  Data reporting.  When specified in the purchase order or contract, a copy of the following data, as applicable, will be supplied.

a.        Attributes data for all screening tests (see 4.2) and variables data for all static burn-in, dynamic burn-in, and steady-state life tests (see 3.6).

b.    A copy of each radiograph.

c.    The technology conformance inspection (TCI) data (see 4.4).

d.    Parameter distribution data on parameters evaluated during burn-in (see 3.6). e.    Final electrical parameters data (see 4.2d).

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