MIL-M-38510-657 Microcircuits, Digital, High-Speed Cmos, Buffer Gates, Monolithic SiliconThis specification covers the detail requirements for monolithic silicon, high speed CMOS, logic microcircuits. Two product assurance classes and a choice of case outlines and lead finishes are provided and are reflected in the complete Part or Identifying Number PIN. For this product, the requirements of MIL-M-38510 have been superseded by MIL-PRF-38535 see 6.3.

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MIL-M-38510/657A

TABLE I. Electrical performance characteristics - Continued.

Test	Symbol	Conditions 1/ -55°C ≤ TC ≤ +125°C unless otherwise specified	Device type	VCC	Limits		Unit
Test	Symbol		Device type	VCC	Min	Max	Unit
Supply current quiescent	ICC	VI = 6.0 V VI = GND	01,02	5.5V		10	µA
		VI = 6.0 V VI = GND	03-11	5.5V		20	µA
		VI = 5.5 V VI = GND	51,52	5.5V		10	µA
		VI = 5.5 V VI = GND	53-55 60,61	5.5V		20	µA
Three-state current quiescent	ICCZ	VI = 6.0 V or GND	03-11	6.0V		10	µA
Three-state current quiescent	ICCZ	VI = 5.5 V or GND	53-55, 60,61	5.5V		10	µA
Three-state output leakage current low	IOZL	VOUT = GND OC = VIH or VIL 3/	03-11	6.0V		-2.0	µA
Three-state output leakage current low	IOZL	VOUT = GND OC = VIH or VIL 3/	53-55, 60,61	5.5V		-2.0	µA
Three-state output leakage current high	IOZH	VOUT = VCC OC = VIH or VIL 3/	03-11	6.0V		+2.0	µA
Three-state output leakage current high	IOZH	VOUT = VCC OC = VIH or VIL 3/	53-55, 60,61	5.5V		+2.0	µA
Additional supply current quiescent per input pin (one unit load)	ICC� 4/	For all inputs, VIL = 0.4 V and VIH = 2.4 V Test pin at VIN = 2.4 V When not tested, control pins are at VIH = VCC and VIL = GND IO = 0 µA	52,54	5.5V		1.5	mA
	ICC� 4/		51,53,55 60,61	5.5V		3.0	mA
Input capacitance	CIN	TC = 25°C	All			10	pF
Three-state output capacitance	CO	TC = 25°C	03-11, 53-55, 60,61			20	pF
Power dissipation capacitance	CPD 2/ 5/	TC = +25°C	01			21	pF
			02			27
			03-05 10, 11			50
			06-09 53-55			45
			51			24
			52			20
			60, 61			55

See footnotes at end of table.