MIL-M-38510-657 Microcircuits, Digital, High-Speed Cmos, Buffer Gates, Monolithic SiliconThis specification covers the detail requirements for monolithic silicon, high speed CMOS, logic microcircuits. Two product assurance classes and a choice of case outlines and lead finishes are provided and are reflected in the complete Part or Identifying Number PIN. For this product, the requirements of MIL-M-38510 have been superseded by MIL-PRF-38535 see 6.3.

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MIL-M-38510/657A

Device types 03-11, 53-55, 60 and 61

NOTES:

1. CL includes load and test jig capacitance. See table I for values of CL and RL.

2. S1 = VCC for tPZL and tPLZ measurements. S1 = GND for tPZH and tPHZ measurements.

3. Waveform for negative edge sensitive circuits will be inverted.

4. This waveform is applicable to three-state switching time measurements.

5. The input signal for HCT device types (51-55, 60, 61) will be 0-3 volts; however, the 50% VCC measure point is 1.3 volts for input and output signals. The 10% VCC and 90% VCC points are 0.3V and 2.7V, respectively.

FIGURE 3. Switching time test circuit and waveforms - Continued.