MIL-M-38510-133 Microcircuits, Linear, 10-Bit Digital-To-Analog Converter, Monolithic SiliconThis specification covers the detail requirements for monolithic silicon, 10-bit binary digital-to-analog converters containing deposited thin film resistor networks. Two product assurance classes and a choice of case outlines and lead finishes are provided and are reflected in the complete part number. For this product, the requirements of MIL-M-38510 have been superseded by MIL-PRF-38535, see 6.3

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Test

Symbol

Conditions   1/

-55°C ≤ TA  ≤ +125°C

unless otherwise specified

Device types

Limits

Unit

Min

Max

Monotonicity

Guaranteed by the bit linearity and

Major carry error tests

01

10

Bits

Supply current from VCC

ICC

All digital inputs at 15.0 V

01

+2

+10

mA

Supply current from VEE

IEE

All digital inputs at 0 V

01

-16

-2

mA

Reference voltage output

VREF

IREF  = 2 mA

01

2.45

2.55

V

Digital input leakage

IIL

All digital inputs at 15 V

01

-100

+1

µA

IIH

-1

+100

Zero scale current:     TTL

CMOS

IZS1

VCC  = +5 V, All digital inputs at

0.8 V, TA = 25°C

01

-0.5

+0.5

LSB

IZS2

All digital inputs at 4.5 V, TA  = 25°C

-0.5

+0.5

Zero scale current drift

dIZST/dt

All digital inputs at 0.8 V

01

-10.0

+10.0

mLSB/°C

Full-scale current:       TTL

CMOS

IFS1

All inputs logic "1", VO  = 0 V,

VCC  = +5 V

01

+1.5

+2.5

mA

IFS2

All inputs logic "1", VO  = 0 V,

VCC  = +15 V

+1.5

+2.5

Full-scale current at +10 V

compliance

IFS+

All digital inputs logic "1",

VO  = +10 V, VCC  = +5 V

01

+1.5

+2.5

mA

Full-scale current at  -2 V

compliance

IFS-

All digital inputs logic "1",

VO  = -2 V, VCC = +5 V

01

+1.5

+2.5

mA

Full-scale current change

dIFS+

All digital inputs logic "1",

VO  = 0 V to +10 V

01

-5.0

+5.0

µA

Full-scale current change

dIFS-

All digital inputs logic "1",

VO  = 0 V to -2 V

01

-5.0

+5.0

µA

Bipolar offset error

BPOE

All inputs logic "0", TA = 25°C    2/

01

-5.0

+5.0

LSB

Bipolar offset drift

dBPOE/dt

All inputs logic "0", measure VO

01

-60.0

+60.0

mLSB/°C

Bipolar zero error (TTL)

BZE

Inputs bits = 512 (binary), TA = 25°C

01

-2.5

+2.5

LSB

Bipolar zero drift

dBZ/dt

Input bits = 512 (binary)

01

-20.0

+20.0

mLSB/°C

Gain error (full scale): TTL

CMOS

AE1

From 0 to full-scale, VCC  = +5 V, AE1  = 10 (VFS  - 9.99023 - VOS),

TA  = 25°C   3/

01

-0.5

+0.5

%FS

AE2

From 0 to full-scale,

AE2  = 10 (VFS  - 9.99023 - VOS), TA  = 25°C   3/

-0.5

+0.5