MIL-M-38510-650 Microcircuits, Digital, High-Speed Cmos, Nand Gates, Monolithic Silicon, Positive LogicThis specification covers the detail requirements for monolithic silicon, high speed CMOS, logic microcircuits. Two product assurance classes and a choice of case outlines and lead finishes are provided and are reflected in the complete Part or Identifying Number PIN. For this product, the requirements of MIL-M-38510 have been superseded by MIL-PRF-38535 see 6.3.

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Symbol

MIL- STD-

883 method

Cases

Terminal conditions  1/

Measured

Terminal

Test limits

Unit

2

2

3

4

6

8

9

10

12

13

14

16

18

19

20

Subgroup 1

TC  = +25°C

Subgroup 2

TC  = +125°C

Subgroup 3

TC  = -55°C

C and

D

1

2

3

4

5

6

7

8

9

10

11

12

13

14

Test no.

1A

18

NC

1C

1D

1Y

GND

2Y

2A

28

NC

2C

2D

VCC

Min

Max

Min

Max

Min

Max

VIC

(pos)

1/

1

1 mA

1/

GND

1A

1/

1.5

V

2

1 mA

"

"

18

"

"

"

3

1 mA

"

"

1C

"

"

"

4

1 mA

"

"

1D

"

"

"

5

"

1 mA

"

2A

"

"

"

6

"

1 mA

"

28

"

"

"

7

"

1 mA

"

2C

"

"

"

8

"

1 mA

"

2D

"

"

"

VIC

(neg)

1/

9

-1 mA

GND

1/

1A

-1.5

"

10

-1 mA

"

"

18

"

"

11

-1 mA

"

"

1C

"

"

12

-1 mA

"

"

1D

"

"

13

"

-1 mA

"

2A

"

"

14

"

-1 mA

"

28

"

"

15

"

-1 mA

"

2C

"

"

16

"

-1 mA

"

2D

"

"

ICCH

3005

17

GND

GND

GND

GND

"

GND

GND

GND

GND

6 V

VCC

0.1

10

µA

ICCL

3005

18

6 V

6 V

6 V

6 V

"

6 V

6 V

6 V

6 V

"

VCC

0.1

10

µA

VOH3

3006

19

1.2 V

4.2 V

4.2 V

4.2 V

-20µA

"

"

1Y

5.95

5.95

5.95

V

20

4.2 V

1.2 V

4.2 V

4.2 V

"

"

"

"

"

"

"

"

21

4.2 V

4.2 V

1.2 V

4.2 V

"

"

"

"

"

"

"

"

22

4.2 V

4.2 V

4.2 V

1.2 V

"

"

"

"

"

"

"

"

23

"

-20µA

1.2 V

4.2 V

4.2 V

4.2 V

"

2Y

"

"

"

"

24

"

"

4.2 V

1.2 V

4.2 V

4.2 V

"

"

"

"

"

"

25

"

"

4.2 V

4.2 V

1.2 V

4.2 V

"

"

"

"

"

"

26

"

"

4.2 V

4.2 V

4.2 V

1.2 V

"

"

"

"

"

"

VOH5

3006

27

1.2 V

4.2 V

4.2 V

4.2 V

-5.2mA

"

"

1Y

5.48

5.2

5.48

"

28

4.2 V

1.2 V

4.2 V

4.2 V

"

"

"

"

"

"

"

"

29

4.2 V

4.2 V

1.2 V

4.2 V

"

"

"

"

"

"

"

"

30

4.2 V

4.2 V

4.2 V

1.2 V

"

"

"

"

"

"

"

"

31

"

-5.2mA

1.2 V

4.2 V

4.2 V

4.2 V

"

2Y

"

"

"

"

32

"

"

4.2 V

1.2 V

4.2 V

4.2 V

"

"

"

"

"

"

33

"

"

4.2 V

4.2 V

1.2 V

4.2 V

"

"

"

"

"

"

34

"

"

4.2 V

4.2 V

4.2 V

1.2 V

"

"

"

"

"

"

VOL3

3007

35

4.2 V

4.2 V

4.2 V

4.2 V

20µA

"

"

1Y

0.05

0.05

0.05

"

36

"

20µA

4.2 V

4.2 V

4.2 V

4.2 V

"

2Y

"

"

"

"

VOL5

3007

37

4.2 V

4.2 V

4.2 V

4.2 V

5.2mA

"

"

1Y

0.26

0.4

0.26

"

38

"

5.2mA

4.2 V

4.2 V

4.2 V

4.2 V

"

2Y

"

"

"

"

IOS4

3011

39

GND

GND

GND

GND

GND

"

4 V

1Y

-10

-120

-10

-120

-10

-120

mA

40

"

GND

GND

GND

GND

GND

4 V

2Y

"

"

"

"

"

"

mA

IIH

3010

41

6 V

GND

GND

GND

"

6 V

1A

0.05

0.1

µA

42

GND

6 V

GND

GND

"

"

18

"

"

"

43

GND

GND

6 V

GND

"

"

1C

"

"

"

44

GND

GND

GND

6 V

"

"

1D

"

"

"

45

"

6 V

GND

GND

GND

"

2A

"

"

"

46

"

GND

6 V

GND

GND

"

28

"

"

"

47

"

GND

GND

6 V

GND

"

2C

"

"

"

48

"

GND

GND

GND

6 V

"

2D

"

"

"