MIL-M-38510-650 Microcircuits, Digital, High-Speed Cmos, Nand Gates, Monolithic Silicon, Positive LogicThis specification covers the detail requirements for monolithic silicon, high speed CMOS, logic microcircuits. Two product assurance classes and a choice of case outlines and lead finishes are provided and are reflected in the complete Part or Identifying Number PIN. For this product, the requirements of MIL-M-38510 have been superseded by MIL-PRF-38535 see 6.3.

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Test

Symbol

Conditions  1/

-55°C ≤ TC  ≤ +125°C

unless otherwise specified

Device types

VCC

Limits

Unit

Min

Max

Input current low

IIL

VIN  = GND

All

6.0 V

-0.1

µA

Input current high

IIH

VIN  = VCC

All

6.0 V

0.1

µA

Short circuit output current

I0S1   2/

V0UT  = GND VIN  = GND

All

2.0 V

-2

-50

mA

I0S2   2/

4.5 V

-15

-150

I0S3   2/

6.0 V

-25

-180

I0S4

4.0 V

-10

-120

Supply current quiescent

ICC

VIN  = 6.0 V or GND

All

6.0 V

10.0

µA

Positive going threshold voltage

VT+

05  2/

2.0 V

0.7

1.5

V

05  2/

4.5 V

1.7

3.15

V

05

6.0 V

2.1

4.2

V

Negative going threshold voltage

VT-

05  2/

2.0 V

0.3

1.0

V

05  2/

4.5 V

0.9

2.2

V

05

6.0 V

1.2

3.0

V

Hysteresis voltage

VH

05  2/

2.0 V

0.2

1.0

V

05  2/

4.5 V

0.4

1.4

V

05

6.0 V

0.6

2.5

V

Input capacitance

CIN

Tc = +25°C

All

10

pF

Power dissipation capacitance

CPD

2/  3/

Tc = +25°C

01

25

pF

02

25

03

26

04

34

05

30