MIL-M-38510-650 Microcircuits, Digital, High-Speed Cmos, Nand Gates, Monolithic Silicon, Positive LogicThis specification covers the detail requirements for monolithic silicon, high speed CMOS, logic microcircuits. Two product assurance classes and a choice of case outlines and lead finishes are provided and are reflected in the complete Part or Identifying Number PIN. For this product, the requirements of MIL-M-38510 have been superseded by MIL-PRF-38535 see 6.3.

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MIL-M-38510/650C

d. Interim and final electrical test parameters shall be as specified in table II.

e. For class S devices, post dynamic burn-in, or class B devices, post static burn-in, electrical parameter measurements may, at the manufacturer's option, be performed separately or included in the final electrical parameter requirements.

4.2.1 Percent defective allowable (PDA).

a. The PDA for class S devices shall be 5 percent for static burn-in and 5 percent for dynamic burn-in, based on the exact number of devices submitted to each separate burn-in.

b. Static burn-in I and II failure shall be cumulative for determining the PDA.

c. The PDA for class B devices shall be in accordance with MIL-PRF-38535 for static burn-in. Dynamic burn-in is not required.

d. Those devices whose measured characteristics, after burn-in, exceed the specified delta (�) limits or electrical parameter limits specified in table III, subgroup 1, are defective and shall be removed from the lot. The verified failures divided by the total number of devices in the lot initially submitted to burn-in shall be used to determine the percent defective for the lot and the lot shall be accepted or rejected based on the specified PDA.

4.3 Qualification inspection. Qualification inspection shall be in accordance with MIL-PRF-38535.

4.4 Technology Conformance inspection (TCI). Technology conformance inspection shall be in accordance with

MIL-PRF-38535 and herein for groups A, B, C, and D inspections (see 4.4.1 through 4.4.4).

4.4.1 Group A inspection. Group A inspection shall be in accordance with table III of MIL-PRF-38535 and as follows:

a. Tests shall be performed in accordance with table II herein. b. Subgroups 5, 6, 7, and 8 shall be omitted.

c. Subgroup 4 (CIN measurement) shall be measured only for initial qualification and after process or design changes that may affect input capacitance. Capacitance shall be measured between the designated terminal and VSS at a frequency of 1 MHz.

d. Subgroups 9 and 11 shall be measured only for initial qualification and after process or design changes which may affect dynamic performance.