MIL-M-38510-650 Microcircuits, Digital, High-Speed Cmos, Nand Gates, Monolithic Silicon, Positive LogicThis specification covers the detail requirements for monolithic silicon, high speed CMOS, logic microcircuits. Two product assurance classes and a choice of case outlines and lead finishes are provided and are reflected in the complete Part or Identifying Number PIN. For this product, the requirements of MIL-M-38510 have been superseded by MIL-PRF-38535 see 6.3.

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Symbol

MIL- STD-883 method

Cases

Terminal conditions  1/

Measured

Terminal

Test limits

Unit

2

2

3

4

6

8

9

10

12

13

14

16

18

19

20

Subgroup 9

3/  TC  = +25°C

Subgroup 10

TC  = +125°C

Subgroup 11

3/  TC  = -55°C

C and

D

1

2

3

4

5

6

7

8

9

10

11

12

13

14

Test no.

1A

18

2A

28

2C

2Y

GND

3Y

3A

38

3C

1Y

1C

VCC

Min

Max

Min

Max

Min

Max

tTLH

3004 (fig. 3)

93

IN

4.5 V

GND

OUT

4.5 V

4.5 V

1Y

3

15

3

20

3

15

ns

94

4.5 V

IN

"

"

4.5 V

"

1Y

"

"

"

"

"

"

"

95

4.5 V

4.5 V

"

"

IN

"

1Y

"

"

"

"

"

"

"

96

IN

4.5 V

4.5 V

OUT

"

"

2Y

"

"

"

"

"

"

"

97

4.5 V

IN

4.5 V

"

"

"

2Y

"

"

"

"

"

"

"

98

4.5 V

4.5 V

IN

"

"

"

2Y

"

"

"

"

"

"

"

99

"

OUT

IN

4.5 V

4.5 V

"

3Y

"

"

"

"

"

"

"

100

"

"

4.5 V

IN

4.5 V

"

3Y

"

"

"

"

"

"

"

101

"

"

4.5 V

4.5 V

IN

"

3Y

"

"

"

"

"

"

"

tTHL

3004 (fig. 3)

102

IN

4.5 V

"

OUT

4.5 V

"

1Y

3

15

3

20

3

15

"

103

4.5 V

IN

"

"

4.5 V

"

1Y

"

"

"

"

"

"

"

104

4.5 V

4.5 V

"

"

IN

"

1Y

"

"

"

"

"

"

"

105

IN

4.5 V

4.5 V

OUT

"

"

2Y

"

"

"

"

"

"

"

106

4.5 V

IN

4.5 V

"

"

"

2Y

"

"

"

"

"

"

"

107

4.5 V

4.5 V

IN

"

"

"

2Y

"

"

"

"

"

"

"

108

"

OUT

IN

4.5 V

4.5 V

"

3Y

"

"

"

"

"

"

"

109

"

"

4.5 V

IN

4.5 V

"

3Y

"

"

"

"

"

"

"

110

"

"

4.5 V

4.5 V

IN

"

3Y

"

"

"

"

"

"

"