MIL-M-38510/61C
6.5 Abbreviations, symbols, and definitions. The abbreviations, symbols, and definitions used herein are defined
in MIL-PRF-38535, MIL-HDBK-1331, and as follows:
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GND ............................................ Ground zero voltage potential |
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VOTH ............................................. High-level threshold output voltage |
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VOTL ............................................. Low-level threshold output voltage |
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VITH .............................................. High-level threshold input voltage |
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VITL .............................................. Low-level threshold input voltage |
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VEEL ............................................. Shifted power supply voltage for the purpose of ac testing |
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TJ ................................................ Circuit junction temperature |
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TC ................................................ Case operating temperature |
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PD ................................................ Circuit power dissipation |
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εJC ................................................ Junction to case thermal resistance |
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6.6 Logistic support. Lead materials and finishes (see 3.3) are interchangeable. Unless otherwise specified,
microcircuits acquired for Government logistic support will be acquired to device class B (see 1.2.2), lead material
and finish A (see 3.3). Longer length leads and lead forming should not affect the part number.
6.7 Substitutability. The cross-reference information below is presented for the convenience of users. Microcircuits covered by this specification will functionally replace the listed generic-industry type. Generic-industry microcircuit types may not have equivalent operational performance characteristics across military temperature
ranges or reliability factors equivalent to MIL-M-35810 device types and may have slight physical variations in relation to case size. The presence of this information should not be deemed as permitting substitution of generic-industry types for MIL-M-38510 types or as a waiver of any of the provisions of MIL-PRF-38535.
Military device type |
Generic-industry type |
01 |
10531 |
02 |
10631 |
03 |
10576 |
04 |
10535 |
6.8 Test limit compensation examples.
a. A device which has a power dissipation of 100 mW in case F is to be tested under a zero airflow condition. on figure 15, σTJ between 500 linear ft/min and zero airflow is +4°C. In order to adjust the various parameter limits, use figure 16 which defines the limit adjustment coefficients for σTJ. To adjust VOH(max) at -55°C, use the +σTJ column of the -55°C portion of figure 16 and locate the coefficient corresponding to VOH(max). This value is 1.25 mV/°C. Multiply the σTJ by the coefficient and algebraically add it to the -55°C VOH(max) limit from table III.
VOH(max) (adjusted limit) = (+4°C) x (1.25 mV/°C) + (-880 mV)
= 5 mV -880mV = -875 mV
Use -875 mV
Follow the same procedure to adjust the remaining parameters at -55°C as well as all parameters at 25°C and 125°C.
b. A device with a power dissipation of 150 mW in case E is to be tested at an airflow of 200 linear ft/min and
the 25°C testing is to be accomplished at an ambient temperature of +20°C. On figure 14 σTJ due to airflow is
+3°C. The σTJ due to ambient temperature change is -5°C (25-20). Therefore the total σTJ = -5 +3 = -2°C.
Using figure 16 find the 25°C, -σTJ column. To adjust the VOL (max) for a negative σTJ, this value is 0.44
mV/°C. Multiply the σTJ by the coefficient and algebraically add it to the +25°C VOL (max) limit from table III.
VOL (max) (adjusted limit) = (-2°C) x (0.44 mV/°C) + (-1620 mV)
= -.88 mV - 1620 mV = -1620.88 mV
Use - 1621 mV
Follow the same procedure to adjust the remaining parameters at +25°C.
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