MIL-M-38510-207 Microcircuit, Digital, 256-Bit, Schottky, Bipolar, Programmable Read-Only Memory Prom, Monolithic SiliconThis specification covers the detail requirements for monolithic silicon, PROM microcircuits which employ thin film nichrome NiCr resistors, tungsten W, titanium tungsten TiW, or zapped vertical emitter ZVE as the fusible link or programming element. Two product assurance classes and a choice of case outlines and lead material and finishes are provided for each type and are reflected in the complete part number. For this product, the requirements of MIL-M-38510 have been superseded by MIL-PRF-38535, see 6.4.

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Parameter

Symbol

Conditions

Limits

Unit

Min

Recommended

Max

Programming voltage

to VCC

VCCP  1/

ICCP = 425 ±75 mA;

transient or steady-state

8.5

8.75

9.0

V

Verification upper limit

VCCVH

5.3

5.5

5.7

V

Verification normal limit

VCCVN

4.75

5.0

5.25

V

Verification lower limit

VCCVL

4.3

4.5

4.7

V

Verify threshold

VS  2/

1.4

1.5

1.6

V

Programming supply current

ICCP

VCCP = +8.75 ±0.25 V

350

500

mA

Input voltage high level

"1"

VIH

2.4

5.5

V

Input voltage low level

"0"

VIL

0

0.8

V

Input current

IIH

VIH = +5.5 V

50

µA

Input current

IIL

VIL = +0.4 V

-500

µA

Forced output voltage

(program)

VOPF   3/

IOUT = 200 ±20 mA, transient or steady-state

17

17.5

18.0

V

Forced output current

(program)

IOPF

VOPF = +17 ±1 V

180

220

mA

Output pulse rise time

tRZ

17

20

25

µs

CE  programming pulse width

tP

10

10

25

µs

Pulse sequence delay

tD

5

10

µs

Address program verify cycle

tPVA

1

ms

Memory program verify time (continuous)

tPVM

20

sec

Fusing attempts per link

FL

1

cycle