MIL-M-38510-207 Microcircuit, Digital, 256-Bit, Schottky, Bipolar, Programmable Read-Only Memory Prom, Monolithic SiliconThis specification covers the detail requirements for monolithic silicon, PROM microcircuits which employ thin film nichrome NiCr resistors, tungsten W, titanium tungsten TiW, or zapped vertical emitter ZVE as the fusible link or programming element. Two product assurance classes and a choice of case outlines and lead material and finishes are provided for each type and are reflected in the complete part number. For this product, the requirements of MIL-M-38510 have been superseded by MIL-PRF-38535, see 6.4.

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MIL-M-38510/207E

4.8  Programming procedure for circuit B.   The programming characteristics in table IVB and the following procedures shall be used for programming the devices:

a.  Connect the device in the electrical configuration for programming.  The waveforms on figure 5B and the programming characteristics of table IVB shall apply to these procedures.

b.  Raise VCC to 5.5 volts.

c.   Address the PROM with binary address of the selected word to be programmed.

Address inputs are TTL compatible.

d.  Disable the chip by applying VIH to the  CE  input.   CE  input is TTL compatible.

e.  Apply the VPP pulse to the  CE  pin.  In order to insure that the output transistor is off before increasing

the voltage on the output pin, the program pin's voltage pulse shall precede the output pin's programming

pulse by tD1 and leave after the output pin's programming pulse by tD2 (see figure 5B).

f.   Apply the VOUT pulse with duration of tP to the output selected for programming (see table IVB).

The outputs shall be programmed one output at a time, since internal decoding circuitry is capable of

sinking only one unit of programming current at a time.  Note that the PROM is supplied with fuses generating a high-level logic output.  Programming a fuse will cause the output to go to a low-level logic in the verify mode.

g.  Other bits in the same word may be programmed sequentially applying VOUT pulses to each output to be programmed.

h.  Repeat 4.8b through 4.8g for all bits to be programmed.

i.    Enable the chip by applying VIL to the  CE  input and verify the program.

Verification may check for a low output by requiring the device to sink 12 mA at VCC = 4.0 V and

0.2 mA at VCC = 7.0 V at TC = 25°C.

j.    For classes S and B devices, if any bit does not verify as programmed it shall be considered a programming reject.

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