MIL-M-38510-207 Microcircuit, Digital, 256-Bit, Schottky, Bipolar, Programmable Read-Only Memory Prom, Monolithic SiliconThis specification covers the detail requirements for monolithic silicon, PROM microcircuits which employ thin film nichrome NiCr resistors, tungsten W, titanium tungsten TiW, or zapped vertical emitter ZVE as the fusible link or programming element. Two product assurance classes and a choice of case outlines and lead material and finishes are provided for each type and are reflected in the complete part number. For this product, the requirements of MIL-M-38510 have been superseded by MIL-PRF-38535, see 6.4.

Pages 1 - 2 - 3 - 4 - 5 - 6 - 7 - 8 - 9 - 10 - 11 - 12 - 13 - 14 - 15 - 16 - 17 - 18 - 19 - 20 - 21 - 22 - 23 - 24 - 25 - 26 - 27 - 28 - 29 - 30 - 31 - 32 - 33 - 34 - 35 - 36

MIL-M-38510/207E

4.5 Methods of inspection. Methods of inspection shall be specified and as follows:

4.5.1 Voltage and current. All voltages given are referenced to the microcircuit ground terminal. Currents given are conventional and positive when flowing into the referenced terminal.

4.6 Programming procedure identification. The programming procedure to be utilized shall be identified by the manufacturer's circuit designator. The circuit designator is cross referenced in paragraph 6.6 herein with the manufacturer's symbol or CAGE number.

4.7 Programming procedure for circuit A. The programming characteristics in table IVA and the following procedures shall be used for programming the device.

a. Connect the device in the electrical configuration for programming. The waveforms on figure 5A and the programming characteristics in table IVA shall apply to these procedures.

b. Address the PROM with the binary address of the word to be programmed. Address inputs are TTL

compatible. An open circuit shall not be used to address the PROM. c. Apply VPL voltage to VCC.

d. Bring the CE X inputs high and the CE X inputs low to disable the device. The chip enables are TTL

compatible. An open circuit shall not be used to disable the device.

e. Disable the programming circuitry by applying a voltage of VOPD to the outputs of the PROM. f. Raise VCC to VPH with rise time less than or equal to tTLH.

g. After a delay equal to or greater than tD1 apply only one pulse with amplitude of VOPE and duration of tp to the output selected for programming. Note that the PROM is supplied with fuses intact, which generates an output high. Programming a fuse will cause the output to go low.

h. Lower VCC to VPL following a delay to tD2 from programming enable pulse applied to an output. i. Enable the PROM for verification by applying VIL to CE X and VIH to CE X .

j. Apply VPHV to VCC and verify bit is programmed.

k. Repeat steps a through j for all other bits to be programmed in the PROM.

l. For class S and B devices, if any bit does not verify as programmed, it shall be considered a programming reject.