MIL-M-38510-12 Microcircuits, Digital, Bipolar, Ttl, Monostable Multivibrators, Monolithic SiliconThis specification covers the detail requirements for monolithic silicon, bipolar, TTL, monostable multivibrators microcircuits. Two product assurance classes and a choice of case outlines and lead finishes are provided and are reflected in the complete part number. For this product, the requirements of MIL-M-38510 have been superseded by MIL-PRF-38535, see 6.3.

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MIL-M-38510/12J

Description of device type 05 - Continued

Circuit C.  This circuit is used to obtain extended pulse widths.  This configuration obtains extended pulse widths, because of the larger timing resistor allowed by Beta multiplication.

Electrolytics with high inverse leakage currents can be used.

R < RX (0.7) (hFEQ1) or < 2.5 Mn whichever is lesser.

RX (minimum) < RY < (maximum) (5 ≤ RY ≤ 10 kn is recommended).

Q1:  NPN silicon transistor with hFE requirements of above equations, such as 2N5961 or 2N5962. tW � 0.3 RCX.

NOTES:

1.    CX may vary from 0 to any necessary value available.  If however, the capacitor has leakage approaching

3.0 µA or if stray capacitance from either terminal to ground is more than 50 pF, the timing equations may not represent the pulse width obtained.

2.    Configuration B and C are not recommended with retriggerable operation.

3.    RX may vary from 5.0 to 25 kn

FIGURE 3.  Device descriptions - Continued.

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