MIL-M-38510-763 Microcircuits, Digital, Advanced Cmos, Counters, Monolithic Silicon, Positive LogicThis specification covers the detail requirements for monolithic silicon, advanced CMOS, logic microcircuits. Two product assurance classes and a choice of case outlines, lead finishes, and radiation hardness assurance RHA are provided and are reflected in the complete Part or Identifying Number PIN. For this product, the requirements of MIL-M-38510 have been superseded by MIL-PRF-38535 see 6.3.

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MIL-M-38510/7638

1.4	Recommended operating conditions - Continued. 2/ 3/ 4/
	Minimum setup time, CEP, CET, CE to CP (ts): Device type:	02	04	05	Unit
	VCC = 3.0 V; TC = +25°C, -55°C ......................................................................	6.0	6.5	7.0	ns
	TC = +125°C ...............................................................................	7.5	8.0	9.0	ns
	VCC = 4.5 V; TC = +25°C, -55°C ......................................................................	4.5	4.5	5.0	ns
	TC = +125°C ...............................................................................	5.5	5.5	6.0	ns
	Minimum hold time, CEP, CET, CE from CP (th): Device type:	02	04	05	Unit
	VCC = 3.0 V; TC = +25°C, -55°C ......................................................................	1.0	0.0	0.0	ns
	TC = +125°C ...............................................................................	1.0	0.0	0.0	ns
	VCC = 4.5 V; TC = +25°C, -55°C ......................................................................	1.0	0.0	0.5	ns
	TC = +125°C ...............................................................................	1.0	0.5	0.5	ns
	Minimum setup time, SR to CP (ts): Device type:	04	Unit
	VCC = 3.0 V; TC = +25°C, -55°C ......................................................................	14.0	ns
	TC = +125°C ...............................................................................	17.0	ns
	VCC = 4.5 V; TC = +25°C, -55°C ......................................................................	9.5	ns
	TC = +125°C ...............................................................................	12.0	ns
	Minimum hold time, SR from CP (th): Device type:	04	Unit
	VCC = 3.0 V; TC = +25°C, -55°C ......................................................................	0.0	ns
	TC = +125°C ...............................................................................	0.0	ns
	VCC = 4.5 V; TC = +25°C, -55°C ......................................................................	0.0	ns
	TC = +125°C ...............................................................................	0.0	ns
	Minimum pulse width, load and count, CP (tw): Device type:	02	04	05	Unit
	VCC = 3.0 V; TC = +25°C, -55°C ......................................................................	5.0	5.0	5.0	ns
	TC = +125°C ...............................................................................	5.0	5.0	6.0	ns
	VCC = 4.5 V; TC = +25°C, -55°C ......................................................................	5.0	5.0	5.0	ns
	TC = +125°C ...............................................................................	5.0	5.0	6.0	ns
	Minimum pulse width, low, MR, PL (tw): Device type:	02	05	Unit
	VCC = 3.0 V; TC = +25°C, -55°C ......................................................................	5.0	5.0	ns
	TC = +125°C ...............................................................................	5.0	5.0	ns
	VCC = 4.5 V; TC = +25°C, -55°C ......................................................................	5.0	5.0	ns
	TC = +125°C ...............................................................................	5.0	5.0	ns
	Minimum recovery time, MR, PL to CP (trec): Device type:	02	05	Unit
	VCC = 3.0 V; TC = +25°C, -55°C ......................................................................	1.5	1.0	ns
	TC = +125°C ...............................................................................	1.5	1.5	ns
	VCC = 4.5 V; TC = +25°C, -55°C ......................................................................	1.5	1.0	ns
	TC = +125°C ...............................................................................	2.0	1.0	ns

1.5 Radiation features.

Device types 02, 04, and 05:

Total dose (dose rate = 50 - 300 rads (Si)/s) ................................................. 100 krads (Si)

Single Event Latch-up (SEL) .......................................................................... � 120 MeV-cm2/mg

1/ Stresses above the absolute maximum rating may cause permanent damage to the device. Extended operation at the maximum levels may degrade performance and affect reliability. The maximum junction temperature may be exceeded for allowable short duration burn-in screening conditions in accordance with MIL-PRF-38535.

2/ Unless otherwise noted, all voltages are referenced to GND.

3/ Operation from 2.0 V dc to 3.0 V dc is provided for compatibility with data retention and battery back-up systems. Data retention implies no input transitions and no stored data loss with the following conditions: VIH � 70 percent of VCC,

VIL ≤ 30 percent of VCC, VOH � 70 percent of VCC at -20 µA, VOL ≤ 30 percent of VCC at 20 µA.

4/ Unless otherwise specified, the values listed above shall apply over the full VCC and TC recommended operating range.