MIL-M-38510-59 Microcircuits, Digital, Cmos, Decoder, Monolithic Silicon, Positive LogicThis specification covers the detail requirements for monolithic silicon, CMOS logic microcircuits. Two product assurance classes and a choice of case outlines , lead finishes, and radiation hardness assurance RHA are provided and are reflected in the complete Part or Identifying Number PIN. For this product the requirements of MIL-M-38510 have been superseded by MIL-PRF-38535 see 6.3.

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MIL-M-38510/59D

TABLE I. Electrical performance characteristics - Continued.

Test	Symbol	Conditions VSS = 0 V, -55°C ≤ TA ≤ 125°C unless otherwise specified		Device type	Limits		Unit
Test	Symbol			Device type	Min	Max	Unit
Output high (source) current	IOH1	VDD = 4.5 V VOH = 2.5 V		01	-850		µA
	IOH2	VDD = 5.0 V VOH = 4.5 V		01	-445		µA
	IOH3	VDD = 5.0 V VOH = 4.6 V		51	-360		µA
	IOH4	VDD = 15.0 V VOH = 13.5 V		51	-2.4		mA
Output low (sink) current	IOL1	VDD = 5.0 V VOL = 0.4 V		01	700		µA
	IOL2	VDD = 5.5 V VOL = 0.5 V		01	800		µA
	IOL3	VDD = 5.0 V VOL = 0.4 V		51	360		µA
	IOL4	VDD = 15.0 V VOL = 1.5 V		51	2.4		mA
Input leakage current, high	IIH 1/	Measure inputs sequentially	VDD = 15 V	01		45	nA
Input leakage current, high	IIH 1/		VDD = 18 V	51		45	nA
Input leakage current, low	IIL		VDD = 15 V	01		-45	nA
Input leakage current, low	IIL		VDD = 18 V	51		-45	nA
Input capacitance	Ci	VDD = 0 V, f = 1 MHz TA = 25°C		All		12	pF
Propagation delay time	tPHL	VDD = 5.0 V RL = 200 kO CL = 50 pF See figure 4		All	20	740	ns
Propagation delay time	tPLH	VDD = 5.0 V RL = 200 kO CL = 50 pF See figure 4		All	20	740	ns
Transition time	tTHL	VDD = 5.0 V RL = 200 kO CL = 50 pF See figure 4		All	13	360	ns
Transition time	tTLH	VDD = 5.0 V RL = 200 kO CL = 50 pF See figure 4		All	13	360	ns

1/ Input current at one input node.