MIL-M-38510-504 Microcircuits, Digital, Bipolar Programmable Logic, Monolithic SiliconThis specification covers the detail requirements for monolithic silicon, bipolar, programmable logic microcircuits which employ titanium tungsten TiW resistors as the fusible link or programming element. Two product assurance classes and a choice of case outlines and lead materials and finishes are provided for each type and are reflected in the complete part number. For this product, the requirements of MIL-M-38510 have been superseded by MIL-PRF-38535, see 6.4.

Pages 1 - 2 - 3 - 4 - 5 - 6 - 7 - 8 - 9 - 10 - 11 - 12 - 13 - 14 - 15 - 16 - 17 - 18 - 19 - 20 - 21 - 22 - 23 - 24 - 25 - 26 - 27 - 28 - 29 - 30 - 31 - 32 - 33 - 34 - 35 - 36 - 37 - 38 - 39 - 40 - 41 - 42 - 43 - 44 - 45 - 46 - 47 - 48 - 49 - 50 - 51 - 52 - 53 - 54 - 55 - 56 - 57 - 58 - 59

MIL-M-38510/504B

1.2.3  Case outline.  The case outlines are as designated in MIL-STD-1835 and as follows:

1.3  Absolute maximum ratings.

Supply voltage range ......................................................  -0.5 V  to +12.0 V Input voltage range .........................................................  -1.5 V to +12.0 V Storage temperature range  ............................................  -65°C to +150°C Lead temperature (soldering, 10 seconds) .....................    260°C

Thermal resistance, junction-to-case  ( θ JC) 1/................  (See MIL-STD-1835) Output voltage applied .................................................... -1.5 V to +12.0 V Output sink current .......................................................... 100 mA

Maximum power dissipation (PD) 2/

Device types 01, 02, 03, 04, 05, 06 ............................ 2.0 W

Device types 07, 08, 09, 10........................................ 1.1 W Maximum junction temperature  (TJ  ) .............................. +175°C

1.4  Recommended operating conditions.

Supply voltage ................................................................  4.5 V minimum to 5.5 V maximum

Minimum high level input voltage  (VIH) ...........................  2.0 V Maximum low level input voltage   (VIL) ...........................  0.8 V

Case operating temperature range  (TC) .........................  -55°C to 125°C

2.0  APPLICABLE DOCUMENTS

2.1  General.  The documents listed in this section are specified in sections 3, 4, or 5 of this specification. This section does not include documents cited in other sections of this specification or recommended for additional information or as examples.  While every effort has been made to ensure the completeness of this list, document users are cautioned that they must meet all specified requirements of documents cited in sections 3, 4, or 5 of this specification, whether or not they are listed.

2.2.  Government documents.

2.2.1 Specifications and standards. Unless otherwise specified, the following specifications and standards of the issue cited in the solicitation or contract, form a part of this specification to the extent specified herein.

DEPARTMENT OF DEFENSE SPECIFICATIONS

MIL-PRF-38535   -        Integrated Circuits (Microcircuits) Manufacturing, General Specification for. DEPARTMENT OF DEFENSE STANDARDS

MIL-STD-883       -        Test Method Standard for Microelectronics.

MIL-STD-1835     -        Interface Standard Electronic Component Case Outlines

(Copies of these documents are available online at https://assist.daps.dla.mil/quicksearch/ or https://assist.daps.dla.mil or from the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA  19111-

5094.)

1/  Heat sinking is recommended to reduce the junction temperature.

2/  Must withstand the added PD due to short circuit (e.g., IOS) test

2