MIL-M-38510-203 Microcircuits, Digital, 1024 Bit Schottky, Bipolar, Programmable Read-Only Memory Prom, Monolithic SiliconThis specification covers the detail requirements for monolithic silicon, programmable read-only memory PROM microcircuits which employ thin film nichrome NiCr resistors, tungsten W, titanium tungsten TiW, or zapped vertical emitter ZVE as the fusible link or programming element. Two product assurance classes and a choice of case outlines and lead finishes are provided and are reflected in the complete part number. For this product, the requirements of MIL-M-38510 have been superseded by MIL-PRF-38535, see 6.4.

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MIL-M-38510/203E

TABLE IVA. Programming characteristics for circuit A.

Parameter	Symbol	Limits 1/			Unit
Parameter	Symbol	Min	Rec	Max	Unit
Address input voltage 2/	VIH VIL	2.4 0.0	5.0 0.4	5.0 0.5	V V
Programming Voltage to VCC low Program verify Verify voltage	VPH 3/ VPL VPHV VR 4/	10.75 0.0 --- 4.5	11.0 0.0 5.5 ---	11.25 1.5 --- 5.5	" " " "
Programming input low current at VPH	IILP	---	-300	-600	µA
Programming voltage(VCC) transition time	tTLH tTHL	1 1	5 5	10 10	µs "
Programming delay	tD1 tD2	10 1	10 5	20 5	"
Programming pulse width	tP 5/	90	100	110	"
Programming duty cycle	PDC	---	30	60	%
Output voltage Enable Disable	VOPE 6/ VOPD	10.5 0.0	10.5 5.0	11.0 5.5	V V

During the programming the chip must be disabled for proper operation.

1/ TC = +25°C.

2/ No inputs should be left open for VIH.

3/ VPH source must be capable of supplying one ampere.

4/ It is recommended that post programming dual verification be made at VR minimum and VR maximum.

5/ Note step j in programming procedure.

6/ VOPE source must be capable of supplying 10 mA minimum.