MIL-M-38510-203 Microcircuits, Digital, 1024 Bit Schottky, Bipolar, Programmable Read-Only Memory Prom, Monolithic SiliconThis specification covers the detail requirements for monolithic silicon, programmable read-only memory PROM microcircuits which employ thin film nichrome NiCr resistors, tungsten W, titanium tungsten TiW, or zapped vertical emitter ZVE as the fusible link or programming element. Two product assurance classes and a choice of case outlines and lead finishes are provided and are reflected in the complete part number. For this product, the requirements of MIL-M-38510 have been superseded by MIL-PRF-38535, see 6.4.

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MIL-M-38510/203E

NOTES:

1. Test table for devices programmed in accordance with an altered item drawing may be replaced by the equivalent tests which apply to the specific program configuration for the resulting read-only memory

2. CL = 30 pF minimum, including jig and probe capacitance, R1 =330 n ±25%, and R2 = 680 n ±20%.

3. Outputs may be under load simultaneously.

FIGURE 4. Switching time test circuit.