MIL-M-38510-203 Microcircuits, Digital, 1024 Bit Schottky, Bipolar, Programmable Read-Only Memory Prom, Monolithic SiliconThis specification covers the detail requirements for monolithic silicon, programmable read-only memory PROM microcircuits which employ thin film nichrome NiCr resistors, tungsten W, titanium tungsten TiW, or zapped vertical emitter ZVE as the fusible link or programming element. Two product assurance classes and a choice of case outlines and lead finishes are provided and are reflected in the complete part number. For this product, the requirements of MIL-M-38510 have been superseded by MIL-PRF-38535, see 6.4.

Pages 1 - 2 - 3 - 4 - 5 - 6 - 7 - 8 - 9 - 10 - 11 - 12 - 13 - 14 - 15 - 16 - 17 - 18 - 19 - 20 - 21 - 22 - 23 - 24 - 25 - 26 - 27 - 28 - 29 - 30 - 31 - 32

TABLE III. Group A inspection for device type 01, 03 - Continued.

Terminal conditions 0utputs: Not designated are open or resistive coupled to GND or voltage .

Inputs: Not designated are high � 2.0 V, low s 0.8 V, or open.

1 2

See footnotes at end of device type 02.