MIL-M-38510-203 Microcircuits, Digital, 1024 Bit Schottky, Bipolar, Programmable Read-Only Memory Prom, Monolithic SiliconThis specification covers the detail requirements for monolithic silicon, programmable read-only memory PROM microcircuits which employ thin film nichrome NiCr resistors, tungsten W, titanium tungsten TiW, or zapped vertical emitter ZVE as the fusible link or programming element. Two product assurance classes and a choice of case outlines and lead finishes are provided and are reflected in the complete part number. For this product, the requirements of MIL-M-38510 have been superseded by MIL-PRF-38535, see 6.4.

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MIL-M-38510/203E

1.3  Absolute maximum ratings.

Supply voltage range .............................................................................. -0.5 V dc to +7.0 V dc

Input voltage range ................................................................................. -1.5 V dc at -10 mA to +5.5 V dc

Storage temperature range ..................................................................... -65° to +150°C Lead temperature (soldering, 10 seconds) .............................................. +300°C

Thermal resistance, junction to case (eJC)  1/   ........................................ See MIL-STD-1835

Output supply voltage .............................................................................  -0.5 C dc to +VCC

Output sink current ..................................................................................  +100 mA

Maximum power dissipation (PD) 2/.........................................................  739 mW dc

Maximum junction temperature (TJ).........................................................  +175°C  3/

1.4  Recommended operating conditions.

Supply voltage (VCC) ............................................................................... +4.5 V dc minimum to

+5.5 V dc maximum

Minimum high-level input voltage (VIH)  ................................................... 2.0 V dc Maximum low-level input voltage (VIL)  .................................................... 0.8 V dc Fanout (each output)    ............................................................................ 16 mA  4/

Case operating temperature range (TC)................................................... -55 °C to +125 °C

2.  APPLICABLE DOCUMENTS

2.1 General.  The documents listed in this section are specified in sections 3, 4, or 5 of this specification.  This section does not include documents cited in other sections of this specification or recommended for additional information or as examples.  While every effort has been made to ensure the completeness of this list, document users are cautioned that they must meet all specified requirements of documents cited in sections 3, 4, or 5 of this specification, whether or not they are listed.

2.2  Government documents.

2.2.1  Specifications and Standards.  The following specifications and standards form a part of this specification to the extent specified herein.  Unless otherwise specified,  the issues of these documents are those cited in the solicitation or contract.

DEPARTMENT OF DEFENSE SPECIFICATIONS

MIL-PRF-38535   -        Integrated Circuits (Microcircuits) Manufacturing, General Specification for. DEPARTMENT OF DEFENSE STANDARDS

MIL-STD-883       -        Test Method Standard for Microelectronics.

MIL-STD-1835     -        Interface Standard Electronic Component Case Outline

1/  Heat sinking is recommended to reduce the junction temperature.

2/  Must withstand the added PD  due to short circuit test (e.g. IOS).

3/  Maximum junction temperature shall not be exceeded except for allowable short duration burn-in screening conditions

per MIL-PRF-38535.

4/  12 mA for circuit B.

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