MIL-M-38510/63C
6.5 Abbreviations, symbols, and definitions. The abbreviations, symbols, and definitions used herein are defined in MIL-PRF-38535, MIL-HDBK-1331, and as follows:
BVIN ............................................. Input breakdown voltage.
GND ............................................ Ground zero voltage potential.
VOTH ............................................. High-level threshold output voltage. VOTL ............................................. Low-level threshold output voltage. VITH ............................................. High-level threshold input voltage. VITL .............................................. Low-level threshold input voltage.
VEEL ............................................. Shifted power supply voltage for the purpose of ac testing.
VOLS ............................................. Input protection tests.
ICBO .............................................. Input leakage.
6.6 Logistic support. Lead materials and finishes (see 3.3) are interchangeable. Unless otherwise specified, microcircuits acquired for Government logistic support will be acquired to device class B (see 1.2.2), lead material and finish A (see 3.3). Longer length leads and lead forming should not affect the part number.
6.7 Substitutability. The cross-reference information below is presented for the convenience of users. Microcircuits covered by this specification will functionally replace the listed generic-industry type. Generic-industry microcircuit types may not have equivalent operational performance characteristics across military temperature
ranges or reliability factors equivalent to MIL-M-35810 device types and may have slight physical variations in relation to case size. The presence of this information should not be deemed as permitting substitution of generic-industry types for MIL-M-38510 types or as a waiver of any of the provisions of MIL-PRF-38535.
Military device type |
Generic-industry type |
01 |
10524 |
02 |
10525 |
6.8 Test limit compensation examples.
a. A device which has a power dissipation of 100 mW in case F is to be tested under a zero air flow configuration. On figure 6 sTJ between 500 ft/min and zero air flow is +4°C. In order to adjust the various parameter limits, use figure 7 which defines the limit adjustment coefficients for sTJ. To adjust VOH (max) at
-55°C, use the +sTJ column of the -55°C portion of figure 7 and locate the coefficient corresponding to
VOH (max). This value is 1.25 mV/°C. Multiply at the sTJ by the coefficient and algebraically add it the -55°C VOH (max) limit from table III.
VOH (max) (adjusted limit) = (+4°C X 1.25 mV/°C) + (-880 mV)
= 5 mV -880 mV = -875 mV
Use -875 mV
Follow the same procedure to adjust the remaining parameters at -55°C as well as all parameters at +25°C
and +125°C.
b. A device with a power dissipation of 150 mW in case E is to be tested at an air flow of 200 linear ft/min and the 25°C testing is to be accomplished at a case temperature of +20°C. On figure 5 sTJ due to air flow is
+3°C. The sTJ due to ambient temperature change is -5°C (25-20). Therefore the total sTJ = -5 +3 = -2°C.
Using figure 7, find the +25°C, -sTJ column. To adjust VOL (max) locate the limit coefficient corresponding to VOL (max) for a negative sTJ, this value is 0.44 mV/°C. Multiply the sTJ by the coefficient and algebraically add it to the +25°C VOL (max) limit from table III.
VOL (max) (adjusted limit) = (-2°C) X (0.44 mV/°C) + (-1620 mV)
= -.88 mV - 1620 mV = -1620.88 mV
Use -1621 mV
Follow the same procedure to adjust the remaining parameters at +25°C.
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