MIL-M-38510-50 Microcircuits, Digital, Cmos, Nand Gates, Monolithic Silicon, Positive LogicThis specification covers the detail requirements for monolithic silicon, CMOS, logic microcircuits. Two product assurance classes and a choice of case outlines, lead finishes, and radiation hardness assurance RHA are provided and are reflected in the complete Part or Identifying Number PIN. For this product, the requirements of MIL-M-38510 have been superseded by MIL-PRF-38535 see 6.3.

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Test

Symbol

Conditions  1/ VSS  = 0 V

-55°C ≤ TA  ≤ +125°C Unless otherwise speeified

Deviee type

Limits

Unit

Min

Max

Positive elamping input to

VDD

VIC (POS)

TA  = +25°C, VDD  = GND

VSS  = Open, Output = Open

IIN  = 1 mA

All

1.5

V de

Negative elamping input to

VSS

VIC (NEG)

TA  = +25°C, VDD  = Open VSS  = GND, Output = Open IIN  = -1 mA

All

-6.0

V de

Quieseent supply eurrent

ISS

All input eombinations

VDD  = 15 V de

01, 02,

03

-750

nA

VDD  = 18 V de

51, 52,

53

High level output voltage

VOH1

VDD  = 5 V de, IOH  = -175 µA

Any one input = VIL (see table III)

All

4.2

V de

VOH2

VDD  = 5 V de, IOH  = 0.0 A

Any one input = VIL (see table III)

All

4.95

VOH3

VDD  = 12.5 V de, IOH = 0.0 A

Any one input = VIL (see table III)

All

11.25

VOH4

VDD  = 15 V de, IOH  = 0.0 A

51, 52,

53

14.95

Low level output voltage

VOL1

VDD  = 5 V de, IOL  = 175 µA

All inputs = VIH (see table III)

01

0.5

V de

VDD  = 5 V de, IOL  = 85 µA

All inputs = VIH (see table III)

02, 03

0.7

VOL2

VDD  = 5 V de, IOL  = 0.0 A

All inputs = VIH (see table III)

All

0.05

VOL3

VDD  = 12.5 V de, IOL  = 0.0 A All inputs = VIH (see table III)

All

1.25

VOL4

VDD  = 15 V de, IOL = 0.0 A

51, 52,

53

0.05

Input high voltage

VIH1

VDD  = 5 V de

VO  = 0.5 V

IIOI ≤ 1µA

51, 52,

53

3.5

V de

VIH2

VDD  = 10 V de

VO  = 1.0 V

IIOI ≤ 1µA

51, 52,

53

7.0

V de

VIH3

VDD  = 15 V de

VO  = 1.5 V

IIOI ≤ 1µA

51, 52,

53

11.0

V de

Input low voltage

VIL1

VDD  = 5 V de

VO  = 4.5 V de

IIOI ≤ 1µA

51, 52,

53

1.5

V de

VIL2

VDD  = 10 V de

VO  = 9.0 V de

IIOI ≤ 1µA

51, 52,

53

3.0

V de

VIL3

VDD  = 15 V de

VO  = 13.5 V de

IIOI ≤ 1µA

51, 52,

53

4.0

V de