MIL-M-38510-4 Microcircuits, Digital Ttl, Multiple Nor Gates, Monolithic SiliconThis specification covers the detail requirements for monolithic, silicon, TTL, positive NOR logic gating microcircuits. Two product assurance classes and a choice of case outlines and lead finishes are provided for each type and are reflected in the complete part number. For this product, the requirements of MIL-M-38510 have been superseded by MIL-PRF-38535, see 6.3.

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MIL-M-38510/4D

1.2.4  Absolute maximum ratings.

Supply voltage range ......................................................  -0.5 V dc to +7.0 V dc

Input voltage range .........................................................  -1.5 V dc at -12 mA to +5.5 V dc

Storage temperature range  ............................................  -65°C to +150°C Maximum power dissipation per gate,  PD  ......................  60 mW dc  1/ Lead temperature (soldering 10 seconds) ......................  300°C

Thermal resistance, junction-to-case  (eJC)......................  (See MIL-STD-1835) Junction temperature  (TJ ) 2/..........................................  175°C

1.2  Recommended operating conditions.

Supply voltage.................................................................  4.5 V dc minimum to 5.5 V dc maximum

Minimum high level input voltage  ...................................  2.0 V dc Maximum low level input voltage ....................................  0.8 V dc Normalized fanout (each output)  ....................................  10 maximum Case operating temperature range (TC  ) .........................  -55°C to 125°C

2.0  APPLICABLE DOCUMENT

2.1  General.  The documents listed in this section are specified in sections 3, 4, or 5 of this specification. This section does not include documents cited in other sections of this specification or recommended for additional information or as examples.  While every effort has been made to ensure the completeness of this list, document users are cautioned that they must meet all specified requirements of documents cited in sections 3, 4, or 5 of this specification, whether or not they are listed.

2.2  Government documents.

2.2.1  Specifications and standards.  The following specifications and standards form a part of this specification to the extent specified herein.  Unless otherwise specified, the issues of these documents are those cited in the solicitation or contract.

DEPARTMENT OF DEFENSE SPECIFICATIONS

MIL-PRF-38535   -        Integrated Circuits (Microcircuits) Manufacturing, General Specification for. DEPARTMENT OF DEFENSE STANDARDS

MIL-STD-883       -        Test Method Standard for Microelectronics.

MIL-STD-1835     -        Interface Standard Electronic Component Case Outlines

(Copies of these documents are available online at https://assist.daps.dla.mil/quicksearch/ or https://assist.daps.dla.mil or from the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA  19111-5094.)

2.3  Order of precedence.  In the event of a conflict between the text of this specification and the references cited herein, the text of this document takes precedence.  Nothing in this document, however, supersedes applicable laws and regulations unless a specific exemption has been obtained.

1/  Must withstand the added PD due to short circuit condition (e.g. IOS) at one output for 5 seconds duration.

2/  Maximum junction temperature should not be exceeded except in accordance with allowable short

duration burn-in screening condition in accordance with MIL-PRF-38535.

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