MIL-M-38510-314 Microcircuits, Digital, Low-Power Schottky, Ttl, Monostable Multivibrators, Monolithic SiliconThis specification covers the detail requirements for monolithic silicon, low-power Schottky TTL, monostable multivibrator microcircuits. Two product assurance classes and a choice of case outlines and lead finishes are provided for each type and are reflected in the complete part number. For this product, the requirements of MIL-M-38510 have been superseded by MIL-PRF-38535, see 6.3.

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MIL-M-38510/314C

1.3 Absolute maximum ratings.

Supply voltage range ............................................................................. -0.5 V dc to 7.0 V dc

Input voltage range ................................................................................ -1.5 V dc at -18 mA to 5.5 V dc

Storage temperature range .................................................................... -65° to +150°C Maximum power dissipation per flip-flop, (PD) 1/

Device type 01 ................................................................................. 110 mW dc

Device type 02 .................................................................................. 149 mW dc

Device type 03 .................................................................................. 61 mW dc

Lead temperature (soldering, 10 seconds) ............................................. 300°C Thermal resistance, junction to case (eJC):

Cases A, B, C, D, E, F, and 2 ............................................................... (See MIL-STD-1835)

Junction temperature (TJ) 2/.................................................................... 175°C

1.4 Recommended operating conditions.

Supply voltage (VCC) .............................................................................. 4.5 V dc minimum to 5.5 V dc maximum

Minimum high level input voltage (VIH) ................................................... 2.0 V dc

Maximum low level input voltage (VIL) .................................................... 0.7 V dc

Case operating temperature range (TC) ................................................. -55° to +125°C Minimum pulse width .............................................................................. 40 ns

Input pulse rise/fall time, device type 02

Schmitt, B input ................................................................................ 1 V/s minimum

Logic, A input ................................................................................... 1 V/µs minimum

Clear-inactive-state setup time

Device type 02 ................................................................................. 15 ns minimum

External timing resistance, Rext

Device type 01, 03 ........................................................................... 5 kn minimum, 180 kn maximum

Device type 02 ................................................................................. 1.4 kn minimum, 70 kn maximum

External timing capacitance, Cext

Device type 01, 03 ........................................................................... No restriction

Device type 02 ................................................................................. 1,000 µF maximum

Output duty cycle, device type 02

RT = 2 kn ......................................................................................... 50% duty cycle maximum

TT = 70 kn ........................................................................................ 90 % duty cycle maximum

Wiring capacitance, Rext/Cext terminal

Device type 01, 03 (referenced to GND) .......................................... 50 pF maximum

1/ Must withstand the added PD due to short-circuit test (e.g., IOS).

2/ Maximum junction temperature shall not be exceeded except for allowable short duration burn-in screening

conditions in accordance with MIL-PRF-38535.