MIL-M-38510-204 Microcircuit, Digital, 2048-Bit, Schottky, Bipolar, Programmable Read-Only Memory Prom, Monolithic SiliconThis specification covers the detail requirements for monolithic silicon, PROM microcircuits which employ thin film nichrome NiCr resistors, tungsten W, titanium tungsten TiW, or zapped vertical emitter ZVE as the fusible link or programming element. Two product assurance class and a choice of case outlines and lead finishes are provided and are reflected in the complete part number. For this product, the requirements of MIL-M-38510 have been superseded by MIL-PRF-38535, see 6.4.

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MIL-M-38510/204F

TABLE III.  Group A inspection - Continued.

10/  The VOL and VOH test shall be performed with VCC = 4.5 V.

11/  For unprogrammed 02 devices ( circuit C ), apply 10.0 V on pin 14 ( A8 ); 0.5 V on pin 3 ( A4 ), pin 2 ( A5 ), and pin 1 ( A6 ); and 5.0 V on all other addresses.

12/  For unprogrammed device types 01 and 02 ( circuit G ) select an appropriate address to obtain the desired output state.

13/  For programmed device types 01 and 02 ( circuit G ) apply 10.5 V to pins 2 and 7;  4.5 V to pin 16:

3.0 V to pins 1, 3, 4, 5, 6, 14, and 15;  0.0 V to pins 8 and 13.

14/  For unprogrammed device type 02 ( circuit G ) apply 10.5 V to pins 7 and 2;  4.5 V to pin 16:

3.0 V to pins 1, 4, 5, 6, 14, and 15;  0.0 V to pins 3, 8, and 13.

15/  At the manufacturer's option, this may be performed with VIH = 5.5 V and test limits of 50 µA maximum.

16/

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