MIL-M-38510-204 Microcircuit, Digital, 2048-Bit, Schottky, Bipolar, Programmable Read-Only Memory Prom, Monolithic SiliconThis specification covers the detail requirements for monolithic silicon, PROM microcircuits which employ thin film nichrome NiCr resistors, tungsten W, titanium tungsten TiW, or zapped vertical emitter ZVE as the fusible link or programming element. Two product assurance class and a choice of case outlines and lead finishes are provided and are reflected in the complete part number. For this product, the requirements of MIL-M-38510 have been superseded by MIL-PRF-38535, see 6.4.

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MIL-M-385101204F

TABLE III.  Group A inspection - Continued.

11    For unprogrammed devices (circuit B), apply 12.0 V to 15.0 V on pin 1 ( A6 ).

21    For programmed devices, select an appropriate address to acquire the desired output state, VIL = 0.8 V, VIH = 2.0 V.

31    For unprogrammed devices (circuit D), apply 10.8 V on pin 5 ( A0 ).

41    For unprogrammed devices (circuit A), apply 13.0 V on pins 1 ( A6 ) and 2 ( A5 ).

51    The functional tests shall verify that no fuses are blown for unprogrammed devices or that the altered item drawing exists for programmed devices (see table II and 3.3.2.2).  All bits shall be tested.  The functional tests

shall be performed with VCC = 4.5 V and VCC = 5.5 V.  Terminal conditions shall be as follows:

a.    Inputs: H = 3.0 V, L = 0.0 V.

b.    Outputs:  Output voltage shall be:  H 1.0 V and L ≤ 1.0 V.

61  GALPAT (PROGRAMMED PROM).

This program will test all bits in the array, the addressing and interaction between bits for ac performance tPLH1 and tPHL1 .  Each bit in the pattern is fixed by being programmed with a "H" or "L".  The GALPAT tests shall be performed with VCC = 4.5 V and 5.5 V.

Description:

Step 1.        Word 0 is read. Step 2.        Word 1 is read. Step 3.        Word 0 is read Step 4.        Word 2 is read. Step 5.        Word 0 is read.

Step 6.        The reading procedure continues back and forth between word 0 and the next higher numbered word until word 511 is reached, then increments to the next word and reads back and forth as in step 1 through step 6 and shall include all words.

Step 7.        Pass execution time = ( n2 + n ) x cycle time.  n = 512.

71  SEQUENTIAL (PROGRAMMED PROM).

This program will test all bits in the array for tPLH2 and tPHL2.  The sequential tests shall be performed with

VCC = 4.5 V and 5.5 V. Description:

Step 1.     Each word in the pattern is tested from the enable lines to the output lines for recovery.

Step 2.     Word 0 is addressed.  Enable line is pulled high to low and low to high.  tPHL2 and tPLH2 are read. Step 3.     Word 1 is addressed.  Same enable sequence as above.

Step 4.     The reading procedure continues until word 511 is reached.

Step 5.     Pass execution time = 512 x cycle time.

81  The outputs are loaded per figure 4.

91  For unprogrammed devices ( circuit F ), apply 12.0 V on pin 5 ( A0 ) and 0.0 V pin 4 ( A3 ).

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