MIL-M-38510-201 Microcircuits, Digital, 512-Bit, Bipolar, Programmable Read-Only Memory Prom, Monolithic SiliconThis specification covers the detail requirements for monolithic silicon, PROM microcircuits which employ thin film nichrome NiCr resistors as the fusible link or programming element. One product assurance class and a choice of case outlines and lead finishes are provided and are reflected in the complete part number. For this product, the requirements of MIL-M-38510 have been superseded by MIL-PRF-38535, see 6.4.

Pages 1 - 2 - 3 - 4 - 5 - 6 - 7 - 8 - 9 - 10 - 11 - 12 - 13 - 14 - 15 - 16 - 17 - 18 - 19 - 20 - 21 - 22 - 23

MIL-M-38510/201D

TABLE Iv. Programming specifications.

Parameter		value
Address input voltage	High logic level	Open circuit 1/
	Low logic level	-5.0 v
Power supply voltage		+5.0 v +5%, -0%
G1 voltage 2/		-5.0 v
G2 voltage		0 v
G'2 voltage	Device type 01 (circuit A)	Open
	Device types 01 (circuit B) and 02	0 v
Maximum programming voltage		-7.0 v
Maximum programming current		100 mA
Maximum number of attempts to program a given bit		2
Maximum case temperature during programming		75°C

1/ Open collector TTL gates meet this requirements.

2/ G1 must be connected to -5.0 v prior to applying vCC or programming voltage.

5. PACKAGING

5.1 Packaging requirements. For acquisition purposes, the packaging requirements shall be as specified in the contract or order (see 6.2). When packaging of materiel is to be performed by DoD or in-house contractor personnel, these personnel need to contact the responsible packaging activity to ascertain packaging requirements. Packaging requirements are maintained by the Inventory Control Point's packaging activity within the Military Service or Defense Agency, or within the military service's system command. Packaging data retrieval is available from the managing Military Department's or Defense Agency's automated packaging files, CD-ROM products, or by contacting the responsible packaging activity.