MIL-M-38510-201 Microcircuits, Digital, 512-Bit, Bipolar, Programmable Read-Only Memory Prom, Monolithic SiliconThis specification covers the detail requirements for monolithic silicon, PROM microcircuits which employ thin film nichrome NiCr resistors as the fusible link or programming element. One product assurance class and a choice of case outlines and lead finishes are provided and are reflected in the complete part number. For this product, the requirements of MIL-M-38510 have been superseded by MIL-PRF-38535, see 6.4.

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MIL-M-38510/201D

Device types	01 and 02
Case outlines	J, K, and Z
Terminal number	Terminal symbol
1	NC
2	NC
3	A0
4	A1
5	A2
6	E1
7	E2
8	A3
9	A4
10	A5
11	G1 (See note 1)
12	H (See notes 1 and 2)
13	G2 (See note 1)
14	F (See notes 1 and 2)
15	87
16	86
17	85
18	84
19	83
20	82
21	81
22	80
23	G'2 (See note 1)
24	vCC

NOTES:

1. G1, G2 and G'2 are connected to ground and F and H are left open for normal operation.

2. Terminal F is electrically open in device type 01, circuit A and is connected to an internal inverter (9 th bit)

for device type 01, circuit 8 and device type 02.

3. Terminal H is electrically open in device type 01, circuit 8 and device type 02 and is internally connected to the base of the memory transistor for device type 01, circuit A.

FIGURE 1. Terminal connections.