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MIL-M-38510-201 Microcircuits, Digital, 512-Bit, Bipolar, Programmable Read-Only Memory Prom, Monolithic SiliconThis specification covers the detail requirements for monolithic silicon, PROM microcircuits which employ thin film nichrome NiCr resistors as the fusible link or programming element. One product assurance class and a choice of case outlines and lead finishes are provided and are reflected in the complete part number. For this product, the requirements of MIL-M-38510 have been superseded by MIL-PRF-38535, see 6.4.

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MIL-M-38510/201D


NOTES:


1.    Connect -5.0 V to G1 before applying VCC or programming voltage.

2.    For device type 01, circuit A, G'2 shall be open,  for device type 01 circuit B, and 02 G'2 shall be 0 V.

3.    Generator characteristics are defined in 4.6.


FIGURE 6a.  Programming circuit.


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