MIL-M-38510-172 Microcircuits, Digital, Cmos, And-Or-Invert, Exclusive-Or, Exclusive-Nor Gates, Monolithic Silicon, Positive LogicThis specification covers the detail requirements for monolithic silicon, CMOS, logic microcircuits. Two product assurance classes and a choice of case outlines, lead finishes, and radiation hardness assurance RHA are provided and are reflected in the complete Part or Identifying Number PIN. For this product, the requirements of MIL-M-38510 have been superseded by MIL-PRF-38535 see 6.3.

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MIL-M-38510/172C

TABLE IV. Delta limits at 25°C.

Parameter 1/	Device types
Parameter 1/	01	02	03	04
ISS	±10 nA	±10 nA	±10 nA	±10 nA
IOL1	±15%	±15%	±15%	±15%
IOH1	±15%	±15%	±15%	±15%

1/ Each of the above parameters shall be recorded before and after the required burn-in and life tests to determine delta ().

4.5.3 Quiescent supply current (ISS test). When performing quiescent supply current measurements (ISS), the meter shall be placed so that all currents flow through the meter.

4.5.4 Radiation hardness assurance (RHA) testing. The RHA testing shall be performed in accordance with test procedures and sampling specified in MIL-PRF-38535 and herein.

a. Before irradiation, selected samples shall be assembled in qualified packages and pass the governing electrical parameters (group A subgroup 1 at 25°C) and also be subjected to the threshold-voltage test in table VII in order to calculate the delta threshold (VT) after irradiation.

b. The devices shall be subjected to a total radiation dose as specified in MIL-PRF-38535 for the radiation hardness assurance level being tested, and meet the end-point electrical parameters as defined in table V at

25°C, after exposure. The start and completion of the end-point electrical parameter measurements shall not exceed 2 hours following irradiation.

c. Threshold-voltage test circuit conditions shall be as specified in table VII and figure 4. In situ and remote testing, the tests shall be performed with the devices biased in accordance with table VI and the bias may be interrupted for up to 1 minute to remove devices to the remote bias fixture.

d. After irradiation, the devices shall pass the truth table test as specified in subgroup 7 in table III or if subgroup 7 is not required, then an equivalent truth table test shall be performed.