MIL-M-38510-129 Microcircuits, Monolithic Silicon Interface, Dual, Peripheral DriversThis specification covers the detail requirements for bipolar, monolithic silicon, dual peripheral drivers. Two product assurance classes and a choice of case outlines and lead finishes are provided and are reflected in the complete part number. For this product, the requirements of MIL-M-38510 have been superseded by MIL-PRF-38535, see 6.3

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Test

Symbol

Conditions

-55°C ≤ TA ≤ +125°C

unless otherwise specified

Device type

Limits

Units

Min

Max

Collector emitter breakdown voltage

VCE01

IC = 10 mA

06

25

V

Emitter base breakdown voltage

VEBO

IE = 100 µA, IC = 0

01,06

5

V

Static forward current transfer ratio

hFE1

VCE = 3 V, IC = 100 mA, VS = 4 V, TA = +25°C, +125°C

01,06

25

hFE2

VCE = 3 V, IC = 300 mA, VS = 6 V, TA = +25°C, +125°C

30

hFE3

VCE = 3 V, IC = 100 mA, VS = 4 V, TA = -55°C

10

hFE4

VCE = 3 V, IC = 300 mA, VS = 6 V, TA = -55°C

15

Base emitter voltage

VBE1

IB = 10 mA, IC = 100 mA

01,06

1.2

V

VBE2

IB = 30 mA, IC = 300 mA

1.4

Collector emitter saturation voltage

VCESAT1

IB = 10 mA, IC = 100 mA

01,06

0.5

V

VCESAT2

IB = 30 mA, IC = 300 mA

0.8

Delay time

tD

IC = 200 mA, RL = 50 n, CL = 100 pF, VBE = -1 V, IB = 20 mA, TA = +25°C

01,06

15

ns

IC = 200 mA, RL = 50 n, CL = 100 pF, VBE = -1 V, IB = 20 mA,

-55°C ≤ TA ≤ +125°C

22.5

Rise time

tR

IC = 200 mA, RL = 50 n, CL = 100 pF, VBE = -1 V, IB = 20 mA, TA = +25°C

01,06

20

ns

IC = 200 mA, RL = 50 n, CL = 100 pF, VBE = -1 V, IB = 20 mA,

-55°C ≤ TA ≤ +125°C

30

Storage time

tS

IC = 200 mA, RL = 50 n, CL = 100 pF, VBE = -1 V, IB = 20 mA, TA = +25°C

01

15

ns

IC = 200 mA, RL = 50 n, CL = 100 pF, VBE = -1 V, IB = 20 mA,

-55°C ≤ TA ≤ +125°C

22.5