MIL-M-38510-129 Microcircuits, Monolithic Silicon Interface, Dual, Peripheral DriversThis specification covers the detail requirements for bipolar, monolithic silicon, dual peripheral drivers. Two product assurance classes and a choice of case outlines and lead finishes are provided and are reflected in the complete part number. For this product, the requirements of MIL-M-38510 have been superseded by MIL-PRF-38535, see 6.3

Pages 1 - 2 - 3 - 4 - 5 - 6 - 7 - 8 - 9 - 10 - 11 - 12 - 13 - 14 - 15 - 16 - 17 - 18 - 19 - 20 - 21 - 22 - 23 - 24 - 25 - 26 - 27 - 28 - 29 - 30 - 31 - 32 - 33 - 34 - 35 - 36 - 37 - 38 - 39 - 40 - 41 - 42 - 43 - 44 - 45 - 46 - 47 - 48 - 49 - 50 - 51 - 52 - 53 - 54 - 55 - 56 - 57 - 58 - 59 - 60 - 61 - 62 - 63 - 64 - 65 - 66 - 67 - 68 - 69 - 70 - 71 - 72 - 73 - 74 - 75 - 76 - 77 - 78 - 79 - 80 - 81

Test

Symbol

Conditions

-55°C ≤ TA ≤ +125°C

unless otherwise specified

Device type

Limits

Units

Min

Max

Low level output voltage

VOL1

VCC = 4.5 V, VIN = 0.8 V or 4.5 V; IOL = 100 mA

02, 07

0.5

V

VOL2

VCC = 4.5 V, VIN = 2 V, IOL = 100 mA

03, 08

0.5

VOL3

VCC = 4.5 V, VIN = 0.8 V, IOL = 100 mA

04, 09

0.5

VOL4

VCC = 4.5 V, VIN = 2 V or 0 V, IOL = 100 mA

05, 10

0.5

VOL5

VCC = 4.5 V, VIN = 0.8 V or 4.5 V, IOL = 300 mA

02, 07

0.8

VOL6

VCC = 4.5 V, VIN = 2 V, IOL = 300 mA

03, 08

0.8

VOL7

VCC = 4.5 V, VIN = 0.8 V, IOL = 300 mA

04, 09

0.8

VOL8

VCC = 4.5 V, VIN = 2 V or 0 V, IOL = 300 mA

05, 10

0.8

Low level output voltage, TTL gate

VOL9

VCC = 4.5 V, VIN = 2 V, IO = 16 mA

01, 06

0.5

V

High level output current

IOH1

VCC = 4.5 V, VOH = 30 V, VIN = 2 V

02,07

300

µA

IOH2

VCC = 4.5 V, VOH = 30 V, VIN = 0.8 V or 4.5 V

03,08

300

IOH3

VCC = 4.5 V, VOH = 30 V, VIN = 2 V or 0 V

04,09

300

IOH4

VCC = 4.5 V, VOH = 30 V, VIN = 0.8 V

05,10

300

High level output voltage, TTL gate

VOH

VCC = 4.5 V, VIN = 0.8 V, IOL = -400 µA

01,06

2.4

V

Short circuit output current, TTL gate

IOS1

VCC = 5.5 V

01,06

-55

mA

IOS2

VCC = 4.5 V

-18

Collector base breakdown voltage

VCB01

IC = 100 µA, IE = 0

01

35

V

VCB02

IC = 100 µA, IE = 0

06

40

Collector emitter breakdown voltage

VCER1

IC = 100 µA, RBE = 500 n

01

35

V

VCER2

IC = 100 µA, RBE = 500 n

06

40