MIL-M-38510-126 Microcircuits, Linear, Regulating, Pulse Width Modulator, Monolithic SiliconThis specification covers the detail requirements for monolithic silicon, pulse width modulator microcircuits. Two product assurance classes and a choice of case outlines and lead finishes are provided and are reflected in the complete part number. For this product, the requirements of MIL-M-38510 have been superseded by MIL-PRF-38535, see 6.3

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Test

Symbol

Conditions

VIN = 20 V dc, RT = 3.6 kν ±0.1 % RD = 0 kν, CT = 0.01 ∝F ±0.1 %

-55°C = TC = +125°C

unless otherwise specified

Device type

Limits

Units

Min

Max

Error amplifier section

Input offset voltage

VIO

02, 04

-5

5

mV

Input bias current

IIB

02, 04

.01

10

∝A

Input offset current

IIO

02, 04

-1

1

∝A

Open loop voltage gain

AVS

VCM = 2.5 V

02, 04

60

dB

Common mode rejection

CMR

VCM = 1.5 V to 5.2 V

02, 04

60

dB

Supply voltage rejection ratio

PSRR

VIN = 8 V to 35 V

02, 04

60

dB

Unity gain bandwidth

GBW

AV = 0 dB, see figure 5, TC +25°C

02, 04

2

MHz

Output high level

VHI

02, 04

3.8

V

Output low level

VLO

02, 04

0.5

V

P.W.M. comparator section

Maximum duty cycle

tonMAX /

tOSC

VCOMP = 3.6 V         2/

02, 04

45

50

%

Minimum duty cycle

tonMIN /

tOSC

VCOMP = 0.6 V         2/

02, 04

0.001

%

Output section    5/

Output low

VOL

ISINK = 20 mA

02, 04

0.4

V

ISINK = 100 mA

2.0

Output high

VOH

ISOURCE = -20 mA

02, 04

18

V

ISOURCE = -100 mA

17

Under voltage lockout

VUL

02, 04

6

8

V

Shutdown delay

tSD

TC = -55°C, +25°C, VSD = 3 V

02, 04

500

ns

TC = +125°C, VSD = 3 V

700

Rise time

tR(tr)

02, 04

600

ns

Fall time

tR(tf)

02, 04

300

ns

VC standby current

IC

VC = 35 V

02

200

∝A