MIL-M-38510-126 Microcircuits, Linear, Regulating, Pulse Width Modulator, Monolithic SiliconThis specification covers the detail requirements for monolithic silicon, pulse width modulator microcircuits. Two product assurance classes and a choice of case outlines and lead finishes are provided and are reflected in the complete part number. For this product, the requirements of MIL-M-38510 have been superseded by MIL-PRF-38535, see 6.3

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Test

Symbol

Conditions

VIN = 20 V dc, RT = 2 kν ±0.1 % CT = 0.01 ∝F ±0.1 %

-55°C = TC = +125°C

unless otherwise specified

Device type

Limits

Units

Min

Max

Oscillator section - continued

Output amplitude

VOSC

01

2.4

V

Output pulse width

tPW

01

0.3

∝s

Ramp voltage

VRAMP

01

3.0

3.8

V

Saturation voltage

VSAT

(OSC)

ICT = 5 mA, VOSC = 5 V, TC = +25°C

01

0.7

1.1

V

Comparator section

Duty cycle adjust    2/

range

tON /

tOSC

Min value:  VCM = 2.5 V, Vcomp = 0.5 V

01

0.001

%

Max value:  VCM = 2.5 V, Vcomp = 3.8 V

45

50

Output section    3/

Collector leakage current

ICEX

VC = 40 V

01

10

∝A

Saturation voltage

VSAT

VIN(NI) - VIN(I) 150 mV,

IC = 50 mA

01

2.0

V

Emitter output voltage

VEO

VIN(NI) - VIN(I) 150 mV, TC = +25°C, VC = 20 V,

IE = -50 mA

01

17

V

Rise time

tR(tr)

VIN(NI) - VIN(I) 150 mV, RC = 2 kν, VC = 20 V,

TC = +25°C, CL = 15 pF

01

0.4

∝s

Fall time

tR(tf)

VIN(NI) - VIN(I) 150 mV, RC = 2 kν, VC = 20 V,

TC = +25°C, CL = 15 pF

01

0.2

∝s