MIL-M-38510-122 Microcircuits, Linear, High Slew Rate Operational Amplifiers, Monolithic SiliconThis specification covers the detail requirements for monolithic silicon, operational amplifier microcircuit. Two product assurance classes and a choice of case outlines and lead finishes are provided and are reflected in the complete part number. For this product, the requirements of MIL-M-38510 have been superseded by MIL-PRF-38535, see 6.3

Pages 1 - 2 - 3 - 4 - 5 - 6 - 7 - 8 - 9 - 10 - 11 - 12 - 13 - 14 - 15 - 16 - 17 - 18 - 19 - 20 - 21 - 22 - 23 - 24 - 25 - 26 - 27 - 28 - 29 - 30 - 31 - 32 - 33 - 34 - 35 - 36 - 37 - 38 - 39 - 40 - 41 - 42 - 43 - 44 - 45

MIL-M-38510/122C

1.3 Absolute maximum ratings.

Supply voltage range ....................................................................... ±20 V dc 1/ Input voltage range .......................................................................... ±15 V dc 2/ 3/ Differential input voltage range: 2/ 3/

Device type 01 .............................................................................. ±18 V dc Device types 02 and 03 ................................................................ ±12 V dc Device types 04, 05, and 06 ......................................................... ±15 V dc Device types 07 and 08 ................................................................ ±20 V dc

Storage temperature range .............................................................. -65°C to +150°C Lead temperature (soldering, 10 seconds) ...................................... +300°C.

Junction temperature (TJ) ................................................................ +175°C

1.4 Recommended operating conditions.

Supply voltage range ....................................................................... ±15 V dc

Ambient operating temperature range (TA) ...................................... -55°C to +125°C

1.5 Power and thermal characteristics.

Case outlines	Maximum allowable power dissipation	Maximum eJC	Maximum eJA
G	300 mW at TA = +125°C	40°C/W	150°C/W
H	300 mW at TA = +125°C	45°C/W	150°C/W
P	500 mW at TA = +125°C	26°C/W	119°C/W
2	500 mW at TA = +125°C	30°C/W	120°C/W

2. APPLICABLE DOCUMENTS

2.1 General. The documents listed in this section are specified in sections 3, 4, or 5 of this specification. This section does not include documents cited in other sections of this specification or recommended for additional information or as examples. While every effort has been made to ensure the completeness of this list, document users are cautioned that they must meet all specified requirements of documents cited in sections 3, 4, or 5 of this specification, whether or not they are listed.

2.2 Government documents.

2.2.1 Specifications, standards, and handbooks. The following specifications and standards form a part of this specification to the extent specified herein. Unless otherwise specified, the issues of these documents are those, cited in the solicitation or contract.

DEPARTMENT OF DEFENSE SPECIFICATIONS

MIL-PRF-38535 - Integrated Circuits (Microcircuits) Manufacturing, General Specification for. DEPARTMENT OF DEFENSE STANDARDS

MIL-STD-883 - Test Method Standard for Microelectronics.

MIL-STD-1835 - Interface Standard Electronic Component Case Outlines.

(Copies of these documents are available online at https://assist.daps.dla.mil/quicksearch/ or www.dodssp.daps.mil or from the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-

5094.)

1/ Voltages in excess of these may be applied for short term tests if voltage difference does not exceed 40 volts.

2/ For supply voltages less than ±15 V dc, the absolute maximum input voltage is equal to the supply voltage

(minus 3 volts for device types 01, 02, and 03).

3/ For supply voltages less than ±20 V dc, the absolute maximum input voltage is equal to the supply voltage for device types 07 and 08.