MIL-M-38510-114 Microcircuits, Linear, Bi-Fet Operational Amplifiers, Monolithic SiliconThis specification covers the detail requirements for monolithic silicon, BI-FET operational amplifier microcircuit. Two product assurance classes and a choice of case outlines and lead finishes are provided and are reflected in the complete part number. For this product, the requirements of MIL-M-38510 have been superseded by MIL-PRF-38535, see 6.3.

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MIL-M-38510/114B

TABLE II. Electrical test requirements.

MIL-PRF-38535 test requirements	Subgroups (see table III)
MIL-PRF-38535 test requirements	Class S devices	Class B devices
Interim electrical parameters	1	1
Final electrical test parameters	1*, 2, 3, 4	1*, 2, 3, 4
Group A test requirements	1, 2, 3, 4, 5, 6, 7, 8, 12	1, 2, 3, 4, 5, 6, 7
Group B electrical test parameters when using the method 5005 QCI option	1, 2, 3 and table IV delta limits	N/A
Group C end-point electrical parameters	1, 2, 3 and table IV delta limits	1 and table IV delta limits
Additional electrical subgroups for Group C periodic inspections	N/A	8, 12
Group D end-point electrical parameters	1, 2, 3	1

*PDA applies to subgroup 1.

4. VERIFICATION.

4.1 Sampling and inspection. Sampling and inspection procedures shall be in accordance with MIL-PRF-38535 or as modified in the device manufacturer's Quality Management (QM) plan. The modification in the QM plan shall not effect the form, fit, or function as function as described herein.

4.2 Screening. Screening shall be in accordance with MIL-PRF-38535, and shall be conducted on all devices prior to qualification and quality conformance inspection. The following additional criteria shall apply:

a. The burn-in test duration, test condition, and test temperature, or approved alternatives shall be as specified in the device manufacturer's QM plan in accordance with MIL-PRF-38535. The burn-in test circuit shall be maintained under document control by the device manufacturer's Technology Review Board (TRB) in accordance with MIL-PRF-38535 and shall be made available to the acquiring or preparing activity upon request. The test circuit shall specify the inputs, outputs, biases, and power dissipation, as applicable, in accordance with the intent specified in test method 1015 of MIL-STD-883.

b. Interim and final electrical test parameters shall be as specified in table II, except interim electrical parameters test prior to burn-in is optional at the discretion of the manufacturer.

c. Additional screening for space level product shall be as specified in MIL-PRF-38535.

NOTE: If accelerated high-temperature test conditions are used, the device manufacturer shall ensure that at least 85 percent of the applied voltage is dropped across the device at temperature. The device is not considered functional under accelerated test conditions.