MIL-M-38510-114 Microcircuits, Linear, Bi-Fet Operational Amplifiers, Monolithic SiliconThis specification covers the detail requirements for monolithic silicon, BI-FET operational amplifier microcircuit. Two product assurance classes and a choice of case outlines and lead finishes are provided and are reflected in the complete part number. For this product, the requirements of MIL-M-38510 have been superseded by MIL-PRF-38535, see 6.3.

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MIL-M-385101114B

TABLE I. Electrical performance characteristics - Continued.

11 Bias currents are actually junction leakage currents which double (approximately) for each 10°C increase in junction temperature (TJ). Measurement of bias current is specified at TJ rather than TA, since normal warm up thermal

transients will affect the bias currents. The measurements for bias currents must be made within 25 ms or 5 loop

time constants, whichever is greater after power is first applied to the device for test. Measurement at TA = -55°C

is not necessary since expected values are too small for typical test systems.

21 Bias current is sensitive to power supply voltage, common mode voltage and temperature as shown by the following typical curves:

31 Negative IIB minimum limits reflect the characteristics of device with bias current compensation.

41 CMR is calculated from VIO measurements at VCM = +15 V and -15 V.

51 Continuous limits shall be considerably lower. Protection for shorts to either supply exists providing that

TJ(max) ≤ 175°C.

61 Because of thermal feedback effects from output to input, open loop gain is not guaranteed to be linear or positive over the operating range. These requirements, if needed, should be specified by the user in additional procurement documents.