MIL-M-38510-105 Microcircuits, Linear, Cmos, High Level Analog Switch With Driver, Monolithic SiliconThis specification covers the detail requirements for silicon, CMOS monolithic, analog switches. Two product assurance classes and a choice of case outlines and lead finishes are provided and are reflected in the complete part number. For this product, the requirements of MIL-M-38510 have been superseded by MIL-PRF-38535 see 6.4.

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MIL-M-38510/105A

4.4.2 Group B inspection. Group B inspection shall be in accordance with table II of MIL-PRF-38535.

4.4.3 Group C inspection. Group C inspection shall be in accordance with table IV of MIL-PRF-38535 and as follows:

a. End point electrical parameters shall be as specified in table II herein.

b. The steady-state life test duration, test condition, and test temperature, or approved alternatives shall be as specified in the device manufacturer's QM plan in accordance with MIL-PRF-38535. The burn-in test circuit shall be maintained under document control by the device manufacturer's Technology Review Board (TRB) in accordance with MIL-PRF-38535 and shall be made available to the acquiring or preparing activity upon request. The test circuit shall specify the inputs, outputs, biases, and power dissipation, as applicable, in accordance with the intent specified in test method 1005 of MIL-STD-883. For device types 03, 04, and 07, life test duration shall be divided equally between forward bias and reverse bias.

c. A special subgroup shall be added to group C inspection for class B devices only, and it shall consist of the group A subgroups 4 and 7 as specified in table III herein. This special subgroup shall be performed on each device type that is qualified from those listed in 1.2.1 herein. After initial qualification, the special subgroup shall be performed periodically on a single device type selected from those device types previously qualified. A sample of 5 devices (of the device type to be inspected) shall be chosen and submitted to test with no failures allowed. If not more than 1 failure is found in the first sample of 5, a second sample of 5 is permitted with no further failures allowed. When more than one device type is qualified, the single device type selected shall be different device type for each subsequent periodic

inspection until all qualified device types have been inspected. The sequence of single device types shall be repeated to fulfill the periodic inspection requirement.

4.4.4 Group D inspection. Group D inspection shall be in accordance with table V of MIL-PRF-38535. a. End point electrical parameters shall be as specified in table II herein.

b. A special subgroup shall be added to group D inspection for class S devices only, and it shall consist of the group A subgroups 4 and 7 as specified in table III herein.

c. A special subgroup shall be added to group D inspection for class S devices only, and it shall consist of the group A subgroups 4 and 7 as specified in table III herein. This special subgroup shall be performed on each device type that is qualified from those listed in 1.2.1 herein. After initial qualification, the special subgroup shall be performed periodically on a single device type selected from those device types previously qualified. When more than one device type is qualified, the single device type selected shall

be different device type for each subsequent periodic inspection until all qualified device types have been inspected. The sequence of single device types shall be repeated to fulfill the periodic inspection requirements.

4.5 Methods of inspection. Methods of inspection shall be specified and as follows.

4.5.1 Voltage and current. All voltage values given are referenced to the microcircuit ground terminals. Currents given are conventional current and positive when flowing into the referenced terminal.