MIL-M-38510-105 Microcircuits, Linear, Cmos, High Level Analog Switch With Driver, Monolithic SiliconThis specification covers the detail requirements for silicon, CMOS monolithic, analog switches. Two product assurance classes and a choice of case outlines and lead finishes are provided and are reflected in the complete part number. For this product, the requirements of MIL-M-38510 have been superseded by MIL-PRF-38535 see 6.4.

Pages 1 - 2 - 3 - 4 - 5 - 6 - 7 - 8 - 9 - 10 - 11 - 12 - 13 - 14 - 15 - 16 - 17 - 18 - 19 - 20 - 21 - 22 - 23 - 24 - 25 - 26 - 27 - 28 - 29 - 30 - 31 - 32 - 33 - 34 - 35 - 36 - 37 - 38 - 39

MIL-M-38510/105A

TABLE I. Electrical performance characteristics - Continued.

Test	Symbol	Conditions VCC = ±15 V, GND = 0 V unless otherwise specified	Temperature range	Device type	Limits		Unit
					Min	Max
Positive supply current	+ICC	VIN = 0 V, 5 V see figure 7	TA = -55qC, 25qC	All		10	µA
			TA = 125qC			100
Negative supply current	-ICC	VIN = 0 V, 5 V see figure 7	TA = -55qC, 25qC	All	-10		µA
			TA = 125qC		-100
Logic supply current	+IL	VIN = 0 V, 5 V, see figure 7	TA = -55qC, 25qC	All		10	µA
			TA = 125qC			100
Reference supply current	+IR	VIN = 0 V, 5 V, see figure 7	TA = -55qC, 25qC	All	-10		µA
			TA = 125qC		-100
Turn ON time	tON	See figure 8	TA = -55qC	All		375	ns
			TA = 25qC			450
			TA = 125qC			550
Turn OFF time	tOFF	See figure 8	TA = -55qC	All		250	ns
			TA = 25qC			250
			TA = 125qC			400
Single channel isolation	VISO	f = 1 MHz , VGEN = 1 VP-P, see figure 9	TA = 25qC	All	50		dB
Crosstalk between channels	VCT	f = 1 MHz , VGEN = 1 VP-P, see figure 10	TA = 25qC	All	50		dB
Charge transfer error	VCTE	VS = GND, see figure 11	TA = 25qC	All		15	mV
Break-before-make time delay	tD	See figure 12	-55qC ≤ TA ≤ 125qC	03,04, 07	20		ns

See footnotes at end of table.