MIL-M-38510-105 Microcircuits, Linear, Cmos, High Level Analog Switch With Driver, Monolithic SiliconThis specification covers the detail requirements for silicon, CMOS monolithic, analog switches. Two product assurance classes and a choice of case outlines and lead finishes are provided and are reflected in the complete part number. For this product, the requirements of MIL-M-38510 have been superseded by MIL-PRF-38535 see 6.4.

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MIL-M-38510/105A

TABLE I. Electrical performance characteristics - Continued.

Test	Symbol	Conditions VCC = ±15 V, GND = 0 V unless otherwise specified	Temperature range	Device type	Limits		Unit
Driver input capacitance	CA	VIN = 0 V, see 4.4.1d	TA = 25°C	All		30	pF
Switch input capacitance	CIS	See 4.4.1d, switch off	TA = 25°C	All		20	pF
Switch output capacitance	CoS	See 4.4.1d, switch off	TA = 25°C	All		20	pF

1/ The listed resistance limits correspond to the following voltage values:

75 n correspond to ±9.25 V and ±6.75 V; 150 n correspond to ±8.50 V and ±6.0 V; see table III.

4. VERIFICATIoN.

4.1 Sampling and inspection. Sampling and inspection procedures shall be in accordance with MIL-PRF-38535 or as modified in the device manufacturer's Quality Management (QM) plan. The modification in the QM plan shall not effect the form, fit, or function as function as described herein.

4.2 Screening. Screening shall be in accordance with MIL-PRF-38535, and shall be conducted on all devices prior to qualification and quality conformance inspection. The following additional criteria shall apply:

a. The burn-in test duration, test condition, and test temperature, or approved alternatives shall be as specified in the device manufacturer's QM plan in accordance with MIL-PRF-38535. The burn-in test circuit shall be maintained under document control by the device manufacturer's Technology Review Board (TRB) in accordance with MIL-PRF-38535 and shall be made available to the acquiring or preparing activity upon request. The test circuit shall specify the inputs, outputs, biases, and power dissipation, as applicable, in accordance with the intent specified in test method 1015 of MIL-STD-883.

b. Reverse bias burn-in (method 1015 of MIL-STD-883). This screen shall apply to class S only. However, regardless of device class, for devices 03, 04, and 07, an additional burn-in shall be performed with the logic

level of the switch drivers opposite that used in the first burn-in. Ambient temperature (TA) shall be 125°C minimum. Duration for reverse bias test shall be 24 hours minimum for class S devices, and duration for additional burn-in (class B devices) shall be 160 hours minimum.

c. Interim and final electrical test parameters shall be as specified in table II, except interim electrical parameters test prior to burn-in is optional at the discretion of the manufacturer.

d. For class S devices, post dynamic burn-in, or class B devices, post static burn-in, electrical parameter measurements may, at the manufacturer's option, be performed separately or included in the final electrical parameter measurements.

e. Additional screening for space level product shall be as specified in MIL-PRF-38535.