MIL-M-38510-753 Microcircuits, Digital, Advanced Cmos, Flip-Flops, Monolithic Silicon, Positive LogicThis specification covers the detail requirements for monolithic silicon, advanced CMOS, logic microcircuits. Two product assurance classes and a choice of case outlines, lead finishes, and radiation hardness assurance RHA are provided and are reflected in the complete Part or Identifying Number PIN. For this product, the requirements of MIL-M-38510 have been superseded by MIL-PRF-38535 see 6.3.

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MIL-M-38510/7538

1.3  Absolute maximum ratings.  1/ 2/

Supply voltage range (VCC)................................................................................................ -0.5 V dc to +6.0 V dc

DC input voltage range (VIN).............................................................................................. -0.5 V dc to VCC  + 0.5 V dc DC output voltage range (VOUT) ......................................................................................... -0.5 V dc to VCC  + 0.5 V dc Clamp diode current (IIK, IOK) ............................................................................................. ±20 mA

DC output current (IOUT)..................................................................................................... ±50 mA

DC VCC  or GND current (ICC, IGND)...................................................................................... ±50 mA times the number of outputs

Storage temperature range (TSTG) ..................................................................................... -65°C to +150°C Maximum power dissipation (PD) ....................................................................................... 500 mW

Lead temperature (soldering, 10 seconds) ........................................................................ +300°C

Thermal resistance, junction-to-case (εJC) ........................................................................ See MIL-STD-1835

Junction temperature (TJ) .................................................................................................. +175°C

Case operating temperature range (TC)............................................................................. -55°C to +125°C

1.4  Recommended operating conditions. 2/ 3/ 4/

Supply voltage range (VCC)................................................................................................ +3.0 V dc to +5.5 V dc Input voltage range (VIN).................................................................................................... +0.0 V dc to VCC Output voltage range (VOUT)............................................................................................... +0.0 V dc to VCC

Case operating temperature range (TC)............................................................................. -55°C to +125°C

Maximum low level Input voltage(VIL) ................................................................................ 0.90 V dc at VCC  = 3.0 V dc

1.35 V dc at VCC  = 4.5 V dc

1.65 V dc at VCC  = 5.5 V dc

Minimum high level Input voltage (VIH)............................................................................... 2.10 V dc at VCC  = 3.0 V dc

3.15 V dc at VCC  = 4.5 V dc

3.85 V dc at VCC  = 5.5 V dc

Input rise and fall rate (tr, tf) maximum (VCC  = 3.6 V, VCC  = 5.5 V)...................................... 8 ns/V

Minimum set-up time, data to CP (ts):                                                   Device types:             02         04         07        08        

Minimum hold time, data from CP (th):                                                  Device types:             02         04        07        08         VCC  = 3.0 V dc;  TC  = -55°C to +125°C............................................................................ 0.5 ns   0.0 ns   3.0 ns   2.0 ns VCC  = 4.5 V dc;  TC  = -55°C to +125°C............................................................................ 0.5 ns   0.5 ns   3.0 ns   2.5 ns

Minimum pulse width, CP (tw):                                                               Device types:            02         04         07        08        

Minimum pulse width, CD, SD, or MR (tw):                                            Device types:            02         04         07        08

Minimum recovery time, CD, SD, or MR to CP (trec):                             Device types:            02         04         07        08        

1.5   Radiation features.

Maximum total dose available (dose rate = 50 - 300 rads (Si)/s):

Device type 04..............................................................................................................   100 krads (Si) Device types 02 and 07 ................................................................................................   300 krads (Si)

1/  Stresses above the absolute maximum rating may cause permanent damage to the device.  Extended operation at the maximum levels may degrade performance and affect reliability.  The maximum junction temperature may be exceeded for allowable short duration burn-in screening conditions in accordance with MIL-PRF-38535.

2/  Unless otherwise noted, all voltages are referenced to GND.

3/  Operation from 2.0 V dc to 3.0 V dc is provided for compatibility with data retention and battery back-up systems.  Data retention

implies no input transitions and no stored data loss with the following conditions:  VIH  70 percent of VCC, VIL  ≤ 30 percent of VCC, VOH  70 percent of VCC  at -20 μA, VOL  ≤ 30 percent of VCC  at 20 μA.

4/  Unless otherwise specified, the values listed above shall apply over the full VCC  and TC  recommended operating range.

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