MIL-M-38510-384 Microcircuits, Digital, Bipolar, Advanced Low Power Schottky Ttl, And, Or, Nand And Nor Gates, Monolithic SiliconThis specification covers the detail requirements for monolithic silicon, advanced low power Schottky TTL, positive AND, OR, NAND, and NOR logic gating microcircuits. Two product assurance classes and a choice of case outlines and lead finishes are provided for each type and are reflected in the complete part number. For this product, the requirements of MIL-M-38510 have been superseded by MIL-PRF-38535, see 6.3.

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MIL-M-38510/384A

NOTES:

1. Input pulse characteristics: t1 = t0 = 6 ±1.5 ns; PRR ≤ 1.0 MHz; duty cycle = 50%.

2. Inputs not under test, for device types 01, 03, 05, and 07 are 2.7 V; for device type 02 is ground.

3. CL = 50 pF ±10%, includes jig and probe capacitance.

4. RL1 = 499 n ±1% for device types 01, 02, 05, 07, and 09; RL2 = 680 n ±5% for device types 03 and 10.

5. Voltage measurements are to be made with respect to network ground terminal.

FIGURE 3. Switching time test circuit and waveforms for device types 01, 02, 03, 05, 07, 09, and 10.