MIL-M-38510-384 Microcircuits, Digital, Bipolar, Advanced Low Power Schottky Ttl, And, Or, Nand And Nor Gates, Monolithic SiliconThis specification covers the detail requirements for monolithic silicon, advanced low power Schottky TTL, positive AND, OR, NAND, and NOR logic gating microcircuits. Two product assurance classes and a choice of case outlines and lead finishes are provided for each type and are reflected in the complete part number. For this product, the requirements of MIL-M-38510 have been superseded by MIL-PRF-38535, see 6.3.

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MIL-M-38510/384A

TABLE I. Electrical performance characteristics.

Test	Symbol	Conditions -55qC ≤ TC ≤ +125qC unless otherwise specified		Device type	Limits		Unit
Test	Symbol	Conditions -55qC ≤ TC ≤ +125qC unless otherwise specified		Device type	Min	Max	Unit
Supply current, outputs low	ICCL	VCC = 5.5 V		01, 03		7.8	mA
				02		9.0
				04		9.3
				05		6.0
				06		7.0
				07		3.9
				08		10.6
				09, 10		12.0
				11, 12		14.0
Propagation delay time low-to-high level	tPLH	VCC = 5.0 V, CL = 50 pF ±10%	RL = 500 n	01, 02, 05 07, 11	2	10	ns
				04	2	11
				08	2	9
				06	2	12
				09	1	9
			RL = 680 n	03	10	40
			RL = 680 n	10, 12	5	35
Propagation delay time high-to-low level	tPHL	VCC = 5.0 V, CL = 50 pF ±10%	RL = 500 n	01, 02, 05 07	2	7	ns
				04, 06	3	11
				08	3	12
				09	1	8
				11	1	10
			RL = 680 n	03	2	12
				10	2	12
				12	2	14

1/ The output conditions have been chosen to produce a current that closely approximates one half of the true short-circuit output current, IOS.