MIL-M-38510-384 Microcircuits, Digital, Bipolar, Advanced Low Power Schottky Ttl, And, Or, Nand And Nor Gates, Monolithic SiliconThis specification covers the detail requirements for monolithic silicon, advanced low power Schottky TTL, positive AND, OR, NAND, and NOR logic gating microcircuits. Two product assurance classes and a choice of case outlines and lead finishes are provided for each type and are reflected in the complete part number. For this product, the requirements of MIL-M-38510 have been superseded by MIL-PRF-38535, see 6.3.

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MIL-M-38510/384A

1.2.3  Case outlines.  The case outlines are as designated in MIL-STD-1835 and as follows:

Outline letter               Descriptive designator                    Terminals              Package style

1.3  Absolute maximum ratings.

Supply voltage range .............................................................................. -0.5 V dc to +7.0 V dc

Input voltage range ................................................................................. -1.5 V dc at -18 mA to +7.0 V dc

Storage temperature range  .................................................................... -65° to +150°C Maximum power dissipation (PD), per device:  1/

Device 01, 03  ................................................................................... 35.2 mW dc

Device 02, 04  ................................................................................... 44 mW dc

Device 05, 06  ................................................................................... 33 mW dc

Device 07  ......................................................................................... 17.6 mW dc Device 08  ......................................................................................... 55 mW dc Device 09, 10  ................................................................................... 66 mW dc Device 11, 12  ................................................................................... 77 mW dc Lead temperature (soldering, 10 seconds)  ....................................... +300°C

Thermal resistance, junction to case (eJC):

Cases A, B, C, D, and 2  ................................................................... (See MIL-STD-1835)

Junction temperature (TJ) 2/ ................................................................... 175°C

1.4  Recommended operating conditions.

Supply voltage (VCC) ............................................................................... 4.5 V dc minimum to 5.5 V dc maximum

Minimum high level input voltage (VIH)  ................................................... 2.0 V dc

Maximum low level input voltage (VIL)  .................................................... 0.8 V dc

Case operating temperature range (TC)  ................................................. -55° to +125°C

2.  APPLICABLE DOCUMENTS

2.1  General.  The documents listed in this section are specified in sections 3, 4, or 5 of this specification. This section does not include documents cited in other sections of this specification or recommended for additional information or as examples.  While every effort has been made to ensure the completeness of this list, document users are cautioned that they must meet all specified requirements of documents cited in sections 3, 4, or 5 of this specification, whether or not they are listed.

1/  Must withstand the added PD  due to short-circuit test (e.g., IO).

2/  Maximum junction temperature should not be exceeded except in accordance with allowable short

duration burn-in screening condition in accordance with MIL-PRF-38535.

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