MIL-M-38510-370 Microcircuits, Digital, Bipolar, Advanced Low Power Schottky Ttl, Nand Gates, Monolithic SiliconThis specification covers the detail requirements for monolithic silicon, advanced low power Schottky TTL, positive NAND logic gating microcircuits. Two product assurance classes and a choice of case outlines and lead finishes are provided for each type and are reflected in the complete part number. For this product, the requirements of MIL-M-38510 have been superseded by MIL-PRF-38535, see 6.3.

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TA8LE III.  Group A inspection for device type 01 - Continued.

Terminal conditions (pins not designated may be high � 2.0 V or low s 0.8 V or open).

1/  For case 2, pins not referenced are N/C.

2/  IIL  limits shall be as follows:

3/  Method 3011 of MIL-STD-883 shall be used, except the output shall be as specified herein, and the output current shall be operating rather than short circuit current.

The output conditions have been chosen to produce a current that closely approximates one half of the true short circuit output current, IOS.

4/  IO  limits for circuit A shall be -30 to -112 mA and for circuit C shall be -30 to -110 mA.