MIL-M-38510-370 Microcircuits, Digital, Bipolar, Advanced Low Power Schottky Ttl, Nand Gates, Monolithic SiliconThis specification covers the detail requirements for monolithic silicon, advanced low power Schottky TTL, positive NAND logic gating microcircuits. Two product assurance classes and a choice of case outlines and lead finishes are provided for each type and are reflected in the complete part number. For this product, the requirements of MIL-M-38510 have been superseded by MIL-PRF-38535, see 6.3.

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MIL-M-38510/370A

TABLE I. Electrical performance characteristics.

Test	Symbol	Conditions -55°C ≤ TC ≤ +125°C unless otherwise specified	Device type	Limits		Unit
Test	Symbol	Conditions -55°C ≤ TC ≤ +125°C unless otherwise specified	Device type	Min	Max	Unit
Propagation delay time, high-to-low level	tPHL	VCC = 5.0 V, CL = 50 pF, RL = 500 n	01	2	10	ns
			02	3	12
			03	3	15
			04	5	22
			05	5	28
			06	2	12
Propagation delay time low-to-high level	tPLH		01	3	14	ns
			02	3	15
			03	3	13
			04	3	12
			05	3	14
			06	3	17

1/ The output conditions have been chosen to produce a current that closely approximates one half of the true short-circuit output current, IOS.

TABLE II. Electrical test requirements.

MIL-PRF-38535 test requirements	Subgroups (see table III)
MIL-PRF-38535 test requirements	Class S devices	Class B devices
Interim electrical parameters	1	1
Final electrical test parameters	1*, 2, 3, 9, 10, 11	1*, 2, 3, 9
Group A test requirements	1, 2, 3, 9, 10, 11	1, 2, 3, 9, 10, 11
Group B electrical test parameters when using the method 5005 QCI option	1, 2, 3, 9, 10, 11	N/A
Group C end-point electrical parameters	1, 2, 3, 9, 10, 11	1, 2, 3
Group D end-point electrical parameters	1, 2, 3	1, 2, 3

*PDA applies to subgroup 1.